Optimization of MoO3 buffer layer thickness for short circuit current enhancement in Ag nanoparticle incorporated CuPc solar cell

2015 ◽  
Author(s):  
Devika Kataria ◽  
S. Sundar Kumar Iyer
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Ag Nanoparticle ◽  
Buffer Layer Thickness

scholarly journals Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software

2021 ◽  
pp. 48-58
Author(s):  
C. O. Lawani ◽  
G. J. Ibeha ◽  
Olumide Ige ◽  
Eli Danladi ◽  
J. O. Emmanuela ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Defect Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Copper Indium Gallium Diselenide ◽  
Buffer Layer Thickness ◽  
Cigs Solar Cells

The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the performance of CIGS solar cells were investigated systematically. The study was carried out using Solar Cells Capacitance Simulator (SCAPS) code, which is capable of solving the basic semiconductor equations. Employing numerical modelling, a solar cell with the structure Al|ZnO : Al|In2S3|CIGS|Pt was simulated and in it, a double acceptor defect (-2/-1/0) with a density of 1014 cm-3 was set in the absorber in the first instance. This initial device gave a power conversion efficiency (PCE) of 25.85 %, short circuit current density (Jsc) of 37.9576 mAcm-2, Photovoltage (Voc) of 0.7992 V and fill factor (FF) of 85.22 %. When the density of multivalent defect (-2/-1/0) was varied between 1010 cm-3 and 1017 cm-3 the solar cells performance dropped from 26.81 % to 16.87 %. The champion device was with multivalent defect of 1010 cm-3 which shows an enhancement of 3.71 % from the pristine device. On varying the CIGS layer thickness from 0.4 um to 3.6 um, an increase in PCE was observed from 0.4 um to 1.2 um then the PCE began to decrease beyond a thickness of 1.2 um. The best PCE was recorded with thickness of 1.2 um which gave Jsc of 37.7506 mAcm-2, Voc of 0.8059 V, FF of 85.2655 %. On varying the In2S3 (buffer) layer thickness from 0.01 um to 0.08 um, we observed that there was no significant change in photovoltaic parameters of the solar cells as buffer layer thickness increased.

Study of Buffer Layer Thickness on Bulk Heterojunction Solar Cell

2010 ◽  
Vol 10 (10) ◽  
pp. 6815-6818 ◽  
Author(s):  
Seunguk Noh ◽  
C. K. Suman ◽  
Donggu Lee ◽  
Seohee Kim ◽  
Changhee Lee
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Bulk Heterojunction ◽  
Heterojunction Solar Cell ◽  
Bulk Heterojunction Solar Cell ◽  
Buffer Layer Thickness

scholarly journals Simulation study to find suitable dopants of CdS buffer layer for CZTS solar cell

2019 ◽  
Vol 14 (1) ◽  
pp. 75-84 ◽  
Author(s):  
Farjana Akter Jhuma ◽  
Mohammad Junaebur Rashid
Keyword(s):  
Solar Cell ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Numerical Study ◽  
Short Circuit ◽  
Transparent Conducting Oxide ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Simulation Software ◽  
Window Layer

AbstractThe performance of CZTS solar cell, a promising candidate in the field of energy production from sunlight, can be improved by optimizing the parameters of most widely used CdS buffer layer. In this work, numerical study have been done on the typical CZTS solar cell structures containing Mo thin film as back contact on glass substrate using SCAPS-1D solar cell simulation software. Then, the CZTS has been used as the absorber layer followed by CdS buffer later. Following, ZnO and transparent conducting oxide n-ITO layers have been considered as window layer and front contact, respectively. In the simulations, the CdS buffer layer has been doped with three different materials such as Silver (Ag), Copper (Cu) and Chlorine (Cl) for a wide acceptable range of carrier concentration. After obtaining the suitable carrier concentration, the thickness of the doped buffer layer has been varied keeping other layer parameters constant to see the variation of performance parameters open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (η) of the CZTS solar cell.

Performance of P3HT:PCBM Organic Solar Cell with ZnO Buffer Layer

2014 ◽  
Vol 925 ◽  
pp. 580-584 ◽  
Author(s):  
Mohamad Syafiq Alias ◽  
Sharul Ashikin Kamaruddin ◽  
Che Ani Norhidayah ◽  
Nurulnadia Sarip ◽  
Nayan Nafarizal ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Organic Solar Cell ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Acid Methyl Ester ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Topology ◽  
Solar Simulator

In this paper, we explore the characteristics of bulk heterojunction solar cell based on poly (3-hexyl thiophene) [P3HT] and [6,6]-phenyl-C61-butyric acid methyl ester [PCBM] by introducing a buffer layer with device configuration of ITO/ZnO/P3HT:PCBM/Au. Nanostructured ZnO with individual diameter around 20-50 nm was used as the buffer layer and its effects on the short circuit current density, Jsc and open circuit voltage, Voc were investigated. It was found that, the electrical characteristic of the organic solar cell was obviously changed by introducing the buffer layer. Solar cell characteristic with Voc of 0.3939 V was obtained but the Jsc was very small. The surface topology of the P3HT:PCBM was investigated using an atomic force microscopy (AFM). ZnO nanoparticles were observed using a field emission scanning electron microscope (FESEM) and the electrical properties of the solar cell was measured using a solar simulator with a current – voltage (I-V) measurement system.

scholarly journals Importance of CdS buffer layer thickness on Cu2ZnSnS4-based solar cell efficiency

2018 ◽  
Vol 51 (27) ◽  
pp. 275501 ◽  
Author(s):  
A Cantas ◽  
F Turkoglu ◽  
E Meric ◽  
F G Akca ◽  
M Ozdemir ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Buffer Layer Thickness

scholarly journals Simulation and Numerical Modelling of CIGSSe-Based Solar Cells by AFORS-HET

2021 ◽  
Vol 2114 (1) ◽  
pp. 012075
Author(s):  
Ammar J. Aswad ◽  
Nadeem K. Hassan ◽  
Adnan R. Ahmed
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Window Layer ◽  
Absorption Layer

Abstract A general equation to determine properties of penternary solar cell based on Cu (In, Ga) (Se, S) 2 (CIGSSe) with a double buffer layer ZnS/Zn0.8Mg0.2O(ZMO) were derived. Numerical analysis of a (CIGSSe) solar cell with a double buffer layer ZnS/ZMO, CdS free absorber layer, were investigated using the AFORS-HET software simulation. Taking into consideration the effect of thickness and doping concentration for the CIGSSe absorption layer, ZnS buffer layer and ZnO:B(BZO) window layer on the electron transport, short circuit current density (Jsc) and open circuit voltage (Voc); numerical simulation demonstrated that the changes in band structure characteristics occurred. The solar energy conversion efficiency is 28.34%, the filling factor is 85.59%, the open circuit voltage is 782.3 mV, the short circuit current is 42.32 mA. then we take the range of the gradient between the ratio of x and y for the absorption layer, and the best result of Voc, Jsc, FF, Eff equal (838.7 mV, 40.94 mA/cm2, 86.23%, 29.61%) respectively at x= 0, y= 0.26.

scholarly journals Effect of Zn(O,S) buffer layer thickness on charge carrier relaxation dynamics of CuInSe 2 solar cell

Solar Energy ◽  
2015 ◽  
Vol 115 ◽  
pp. 396-404 ◽  
Author(s):  
Juan Sun ◽  
Venkatram Nalla ◽  
Mai Nguyen ◽  
Yi Ren ◽  
Sing Yang Chiam ◽  
...  
Keyword(s):  
Solar Cell ◽  
Charge Carrier ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Relaxation Dynamics ◽  
Carrier Relaxation ◽  
Buffer Layer Thickness ◽  
Carrier Relaxation Dynamics

Characterization of Dye-Sensitized Solar Cell with Different Nanoparticle sizes

2011 ◽  
Vol 1322 ◽  
Author(s):  
Aung Htun ◽  
Lakshmi V. Munukutla ◽  
Sailaja Radhakrishnan ◽  
Chih Y. Jen ◽  
Arunachalanadar M. Kannan ◽  
...  
Keyword(s):  
Solar Cell ◽  
Layer Thickness ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Nanoparticle Size ◽  
Cell Efficiency ◽  
Dye Sensitized ◽  
20 Nm ◽  
Nanoparticle Sizes

ABSTRACTThe Dye-sensitized Solar Cell (DSSC) has been regarded as the next-generation solar cell because of its simple and low cost fabrication process. The experiments for optimizing the cell efficiency were carried out in this work include varying the TiO2 layer thickness on the working electrode and determining the most favorable nanoparticle size in the TiO2 paste. The TiO2 electrode or working electrode was fabricated using screen printing technique with the Coatema tool with thicknesses ranging from ~20 to 66 μm. It was observed that both open circuit voltage and short circuit current were found to have measurable dependence on the TiO2 layer thickness. The open circuit voltage changed from 0.77 to 0.82 V and correspondingly the short circuit current also varied from ~19 to 23 mA/cm2 depending on the TiO2 layer thickness. Additionally, the cell with 40 μm TiO2 thickness showed 9.06% photo conversion efficiency compared to 6.4% and 8.5% efficiency obtained for the cells with 20 μm and 66 μm TiO2 thicknesses respectively. The second part of the experiment was conducted using three different nanoparticle sizes of 13 nm, 20 nm and 37nm in the TiO2 layer to identify optimum nanoparticle size by maintaining the TiO2 film thickness at 40 μm. The cell with 20 nm size nanoparticle, in combination with 40 μm TiO2 thickness showed 11.2% efficiency that is in par or slightly better than the efficiency value reported for the DSSC in the literature as of now. The work described in this paper showed best possible values for the TiO2 layer thickness and nanoparticle size in the TiO2 for obtaining improved cell efficiency of 11.2%.

Correlation of Hydrogenated Nanocrystalline Silicon Microstructure and Solar Cell Performance

2004 ◽  
Vol 808 ◽  
Author(s):  
Keda Wang ◽  
Anthon Canning ◽  
J.R. Weinberg-Wolf ◽  
E.C.T. Harley ◽  
Daxing Han ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Volume Fraction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Fraction I

ABSTRACTWe used Raman and photoluminescence (PL) spectroscopy to study the relationship between the material properties and the solar cell performance of hydrogenated nanocrystalline silicon (nc-Si:H). The crystalline volume fraction (fc) was deduced from the Raman spectrum. Generally, a high fc leads to a high short circuit current density and a low open circuit voltage. PL spectra were measured using 632.8-nm and 442-nm laser lines. There are two distinguished PL peaks at 80 K, one at ∼1.4 eV originating from the amorphous region, while the other at = 0.9 eV from the nanocrystalline grain boundary regions. Generally, the intensity fraction of this low energy PL peak, IPLc/(IPLa+IPLc), was larger for 442-nm than 632.8-nm excitation, indicating an increase in crystallinity along the growth direction. However, for the best initial performance cells obtained by H2 dilution profiling and the i/p buffer layer, the intensity fraction IPLc/(IPLa+IPLc) decreased from the bulk to the topi/p interface. The Raman and PL results give insight into the correlation between the microstructures and the cell performance, and verified that properly-controlled crystallinity in the intrinsic layer and buffer layer at the i/p interface layer are important for optimizing nc-Si:H solar cells.

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