scholarly journals Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software

2021 ◽  
pp. 48-58
Author(s):  
C. O. Lawani ◽  
G. J. Ibeha ◽  
Olumide Ige ◽  
Eli Danladi ◽  
J. O. Emmanuela ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Defect Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Copper Indium Gallium Diselenide ◽  
Buffer Layer Thickness ◽  
Cigs Solar Cells

The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the performance of CIGS solar cells were investigated systematically. The study was carried out using Solar Cells Capacitance Simulator (SCAPS) code, which is capable of solving the basic semiconductor equations. Employing numerical modelling, a solar cell with the structure Al|ZnO : Al|In2S3|CIGS|Pt was simulated and in it, a double acceptor defect (-2/-1/0) with a density of 1014 cm-3 was set in the absorber in the first instance. This initial device gave a power conversion efficiency (PCE) of 25.85 %, short circuit current density (Jsc) of 37.9576 mAcm-2, Photovoltage (Voc) of 0.7992 V and fill factor (FF) of 85.22 %. When the density of multivalent defect (-2/-1/0) was varied between 1010 cm-3 and 1017 cm-3 the solar cells performance dropped from 26.81 % to 16.87 %. The champion device was with multivalent defect of 1010 cm-3 which shows an enhancement of 3.71 % from the pristine device. On varying the CIGS layer thickness from 0.4 um to 3.6 um, an increase in PCE was observed from 0.4 um to 1.2 um then the PCE began to decrease beyond a thickness of 1.2 um. The best PCE was recorded with thickness of 1.2 um which gave Jsc of 37.7506 mAcm-2, Voc of 0.8059 V, FF of 85.2655 %. On varying the In2S3 (buffer) layer thickness from 0.01 um to 0.08 um, we observed that there was no significant change in photovoltaic parameters of the solar cells as buffer layer thickness increased.

scholarly journals Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4268
Author(s):  
Jessica de Wild ◽  
Gizem Birant ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Electron Microscopic ◽  
Current Increase ◽  
Time Resolved ◽  
Cigs Solar Cells

Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.

Wide-gap CIGS solar cells with Zn1-yMgyO transparent conducting film

2005 ◽  
Vol 865 ◽  
Author(s):  
K. Matsubara ◽  
A. Yamada ◽  
S. Ishizuka ◽  
K. Sakurai ◽  
H. Tampo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Band Gap Energy ◽  
Short Circuit Current Density ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Wide Gap ◽  
Cigs Solar Cells ◽  
Mg Content

AbstractZn1-yMgyO bandgap controllable transparent conducting films were used for the wide-gap Cu(In1-xGax)Se2 thin film solar cells. Undoped Zn1-yMgyO and Al doped Zn1-yMgyO films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn1-yMgyO films with Mg content y of up to 0.10 were examined. For Cu(In1-xGax)Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn1-yMgyO and Al doped Zn1-yMgyO instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.

Advanced Flexible CIGS Solar Cells Enhanced by Broadband Nanostructured Antireflection Coatings

2015 ◽  
Vol 1771 ◽  
pp. 145-150
Author(s):  
Gopal G. Pethuraja ◽  
Roger E. Welser ◽  
John W. Zeller ◽  
Yash R. Puri ◽  
Ashok K. Sood ◽  
...  
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Specific Power ◽  
Band Spectrum ◽  
Solar Panels ◽  
Antireflection Coatings ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Cigs Solar Cells

ABSTRACTFlexible copper indium gallium diselenide (CIGS) solar cells on lightweight substrates can deliver high specific powers. Flexible lightweight CIGS solar cells are also primary candidates for building-integrated panels. In all applications, CIGS cells can greatly benefit from the application of broadband and wide-angle AR coating technology. The AR coatings can significantly improve the transmittance of light over the entire CIGS absorption band spectrum. Increased short-circuit current has been observed after integrating AR coated films onto baseline solar panels. NREL’s System Advisor Model (SAM) has predicted up to 14% higher annual power output on AR integrated vertical or building-integrated panels. The combination of lightweight flexible substrates and advanced device designs employing nanostructured optical coatings together have the potential to achieve flexible CIGS modules with enhanced efficiencies and specific power.

Photoluminescence-Based Method for Imaging Buffer Layer Thickness in CIGS Solar Cells

2020 ◽  
Vol 10 (1) ◽  
pp. 181-187
Author(s):  
Germain Rey ◽  
Thorsten Trupke ◽  
Appu Paduthol ◽  
Kaiwen Sun ◽  
Timothy Nagle ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layer Thickness ◽  
Cigs Solar Cells

Improving Performance of Amorphous Silicon Solar Cells Using Tungsten Oxide as a Novel Buffer Layer between the SnO2/p-a-SiC Interface

2010 ◽  
Vol 1245 ◽  
Author(s):  
Liang Fang ◽  
Seung Jae Baik ◽  
Koseng Su Lim ◽  
Seung Hyup Yoo ◽  
Myung Soo Seo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Tungsten Oxide ◽  
Buffer Layer ◽  
Layer Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Si Solar Cells ◽  
Photovoltaic Characteristics

AbstractA thermally evaporated p-type amorphous tungsten oxide (p-a-WO3) film was introduced as a novel buffer layer between SnO2 and p-type amorphous silicon carbide (p-a-SiC) of pin-type amorphous silicon (a-Si) based solar cells. By using this film, a-Si solar cells with a p-a-WO3/p-a-SiC double p-layer structure were fabricated and the cell photovoltaic characteristics were investigated as a function of p-a-WO3 layer thickness. By inserting a 2 nm-thick p-a-WO3 layer between SnO2 and a 6 nm-thick p-a-SiC layer, the short circuit current density increased from 9.73 to 10.57 mA/cm2, and the conversion efficiency was enhanced from 5.17 % to 5.98 %.

scholarly journals Investigation of Cu(In, Ga)Se2 solar cell performance with non-cadmium buffer layer using TCAD-SILVACO

2018 ◽  
Vol 36 (3) ◽  
pp. 514-519
Author(s):  
Bechlaghem Sara ◽  
Zebentout Baya ◽  
Benamara Zineb
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical Parameters ◽  
Solar Cell Performance ◽  
Photovoltaic Parameters

AbstractThe purpose of this work is to achieve the best efficiency of Cu(In, Ga)Se2 solar cells by replacing the CdS buffer layer with other nontoxic materials. The simulation tool used in this study is Silvaco-Atlas package based on digital resolution 2D transport equations governing the conduction mechanisms in semiconductor devices. The J-V characteristics are simulated under AM1.5G illumination. Firstly, we will report the modeling and simulation results of CdS/CIGS solar cell, in comparison with the previously reported experimental results [1]. Secondly, the photovoltaic parameters will be calculated with CdS buffer layer and without any buffer layer to understand its impact on the output parameters of solar cells. The simulation is carried out with the use of electrical and optical parameters chosen judiciously for different buffers (CdS, ZnOS and ZnSe). In comparison to simulated CdS/CIGS, the best photovoltaic parameters have been obtained with ZnOS buffer layer. The structure has almost the same open circuit voltage Voc and fill factor FF, and higher short circuit current density Jsc, which results in slightly higher conversion efficiencies.

Determining the exciton diffusion length of copper phthalocyanine in operating planar-heterojunction organic solar cells

2020 ◽  
Vol 89 (3) ◽  
pp. 30201 ◽  
Author(s):  
Xi Guan ◽  
Shiyu Wang ◽  
Wenxing Liu ◽  
Dashan Qin ◽  
Dayan Ban
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Diffusion Length ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Thick Layer ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length

Organic solar cells based on planar copper phthalocyanine (CuPc)/C60 heterojunction have been characterized, in which a 2 nm-thick layer of bathocuproine (BCP) is inserted into the CuPc layer. The thin layer of BCP allows hole current to tunnel it through but blocks the exciton diffusion, thereby altering the steady-state exciton profile in the CuPc zone (zone 1) sandwiched between BCP and C60. The short-circuit current density (JSC) of device is limited by the hole-exciton scattering effect at the BCP/CuPc (zone 1) interface. Based on the variation of JSC with the width of zone 1, the exciton diffusion length of CuPc is deduced to be 12.5–15 nm. The current research provides an easy and helpful method to determine the exciton diffusion lengths of organic electron donors.

scholarly journals The Influence of the Thickness of Compact TiO2 Electron Transport Layer on the Performance of Planar CH3NH3PbI3 Perovskite Solar Cells

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3295
Author(s):  
Andrzej Sławek ◽  
Zbigniew Starowicz ◽  
Marek Lipiński
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Transport Layer ◽  
Electron Transport Layer

In recent years, lead halide perovskites have attracted considerable attention from the scientific community due to their exceptional properties and fast-growing enhancement for solar energy harvesting efficiency. One of the fundamental aspects of the architecture of perovskite-based solar cells (PSCs) is the electron transport layer (ETL), which also acts as a barrier for holes. In this work, the influence of compact TiO2 ETL on the performance of planar heterojunction solar cells based on CH3NH3PbI3 perovskite was investigated. ETLs were deposited on fluorine-doped tin oxide (FTO) substrates from a titanium diisopropoxide bis(acetylacetonate) precursor solution using the spin-coating method with changing precursor concentration and centrifugation speed. It was found that the thickness and continuity of ETLs, investigated between 0 and 124 nm, strongly affect the photovoltaic performance of PSCs, in particular short-circuit current density (JSC). Optical and topographic properties of the compact TiO2 layers were investigated as well.

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