scholarly journals Simulation study to find suitable dopants of CdS buffer layer for CZTS solar cell

2019 ◽  
Vol 14 (1) ◽  
pp. 75-84 ◽  
Author(s):  
Farjana Akter Jhuma ◽  
Mohammad Junaebur Rashid
Keyword(s):  
Solar Cell ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Numerical Study ◽  
Short Circuit ◽  
Transparent Conducting Oxide ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Simulation Software ◽  
Window Layer

AbstractThe performance of CZTS solar cell, a promising candidate in the field of energy production from sunlight, can be improved by optimizing the parameters of most widely used CdS buffer layer. In this work, numerical study have been done on the typical CZTS solar cell structures containing Mo thin film as back contact on glass substrate using SCAPS-1D solar cell simulation software. Then, the CZTS has been used as the absorber layer followed by CdS buffer later. Following, ZnO and transparent conducting oxide n-ITO layers have been considered as window layer and front contact, respectively. In the simulations, the CdS buffer layer has been doped with three different materials such as Silver (Ag), Copper (Cu) and Chlorine (Cl) for a wide acceptable range of carrier concentration. After obtaining the suitable carrier concentration, the thickness of the doped buffer layer has been varied keeping other layer parameters constant to see the variation of performance parameters open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF) and efficiency (η) of the CZTS solar cell.

scholarly journals Simulation and Numerical Modelling of CIGSSe-Based Solar Cells by AFORS-HET

2021 ◽  
Vol 2114 (1) ◽  
pp. 012075
Author(s):  
Ammar J. Aswad ◽  
Nadeem K. Hassan ◽  
Adnan R. Ahmed
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Window Layer ◽  
Absorption Layer

Abstract A general equation to determine properties of penternary solar cell based on Cu (In, Ga) (Se, S) 2 (CIGSSe) with a double buffer layer ZnS/Zn0.8Mg0.2O(ZMO) were derived. Numerical analysis of a (CIGSSe) solar cell with a double buffer layer ZnS/ZMO, CdS free absorber layer, were investigated using the AFORS-HET software simulation. Taking into consideration the effect of thickness and doping concentration for the CIGSSe absorption layer, ZnS buffer layer and ZnO:B(BZO) window layer on the electron transport, short circuit current density (Jsc) and open circuit voltage (Voc); numerical simulation demonstrated that the changes in band structure characteristics occurred. The solar energy conversion efficiency is 28.34%, the filling factor is 85.59%, the open circuit voltage is 782.3 mV, the short circuit current is 42.32 mA. then we take the range of the gradient between the ratio of x and y for the absorption layer, and the best result of Voc, Jsc, FF, Eff equal (838.7 mV, 40.94 mA/cm2, 86.23%, 29.61%) respectively at x= 0, y= 0.26.

HIT Solar Cell With V2Ox Window Layer

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3147-3156 ◽  
Author(s):  
Erenn Ore ◽  
Gehan Amaratunga ◽  
Stefaan De Wolf
Keyword(s):  
Solar Cell ◽  
Physical Vapor Deposition ◽  
Crystalline Silicon ◽  
Layer Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Window Layer ◽  
Limiting Factors ◽  
Vapor Deposition Technique

ABSTRACTIn the conventional crystalline silicon heterojunction solar cell with the intrinsic thin layer structure (the HIT solar cell), a p-doped thin film silicon or its alloy (pDTF-Si/A) is used as the hole collecting window layer. However, the parasitic absorbance in the pDTF-Si/A window layer, and the toxic, explosive diborane gas used for p-doping are limiting factors for achieving HIT cells with reduced processing costs and / or higher efficiencies. In this work, pDTF-Si/A is replaced by V2Ox, which is deposited by a simple physical vapor deposition technique. Due to the wide band gap of V2Ox, the HIT solar cell with the V2Ox window layer generates a higher short-circuit current density than the reference conventional HIT cell under 1 sun, and achieves an open-circuit voltage of 0.7 V. Furthermore, the charge carrier lifetime and pseudo-efficiency values of the HIT solar cell with the V2Ox window layer indicate that this cell has the potential to outperform the conventional HIT cell in terms of the power conversation efficiency under the standard test conditions.

High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap

2019 ◽  
Vol 34 (04) ◽  
pp. 2050053
Author(s):  
Fatemeh Ghavami ◽  
Alireza Salehi
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
High Efficiency ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Absorber Layer ◽  
Window Layer

In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se2 solar cell, with ZnO window layer, ZnSe buffer layer, CIGS absorber layer and InGaP reflector layer was studied. The study was performed using the TCAD Silvaco simulator. The effects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of different layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm2, a fill factor (FF) of 86.67040% and an efficiency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far.

Performance of P3HT:PCBM Organic Solar Cell with ZnO Buffer Layer

2014 ◽  
Vol 925 ◽  
pp. 580-584 ◽  
Author(s):  
Mohamad Syafiq Alias ◽  
Sharul Ashikin Kamaruddin ◽  
Che Ani Norhidayah ◽  
Nurulnadia Sarip ◽  
Nayan Nafarizal ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Organic Solar Cell ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Acid Methyl Ester ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Topology ◽  
Solar Simulator

In this paper, we explore the characteristics of bulk heterojunction solar cell based on poly (3-hexyl thiophene) [P3HT] and [6,6]-phenyl-C61-butyric acid methyl ester [PCBM] by introducing a buffer layer with device configuration of ITO/ZnO/P3HT:PCBM/Au. Nanostructured ZnO with individual diameter around 20-50 nm was used as the buffer layer and its effects on the short circuit current density, Jsc and open circuit voltage, Voc were investigated. It was found that, the electrical characteristic of the organic solar cell was obviously changed by introducing the buffer layer. Solar cell characteristic with Voc of 0.3939 V was obtained but the Jsc was very small. The surface topology of the P3HT:PCBM was investigated using an atomic force microscopy (AFM). ZnO nanoparticles were observed using a field emission scanning electron microscope (FESEM) and the electrical properties of the solar cell was measured using a solar simulator with a current – voltage (I-V) measurement system.

scholarly journals The absorber and buffer layer thicknesses for CdTe/CdS based thin film solar cell efficiency at various operational temperatures

2021 ◽  
Vol 24 (1) ◽  
pp. 70
Author(s):  
Omar Ghanim Ghazal ◽  
Ahmed Waleed Kasim ◽  
Nabeel Zuhair Tawfeeq
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Structural Parameters ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Window Layer ◽  
The Impact

Cadmium telluride (CdTe)/cadmium sulfide (CdS) solar cell is a promising candidate for photovoltaic (PV) energy production, as fabrication costs are compared by silicon wafers. We include an analysis of CdTe/CdS solar cells while optimizing structural parameters. Solar cell capacitance simulator (SCAPS)-1D 3.3 software is used to analyze and develop energy-efficient. The impact of operating thermal efficiency on solar cells is highlighted in this article to explore the temperature dependence. PV parameters were calculated in the different absorber, buffer, and window layer thicknesses (CdTe, CdS, and SnO2). The effect of the thicknesses of the layers, and the fundamental characteristics of open-circuit voltage, fill factor, short circuit current, and solar energy conversion efficiency were studied. The results showed the thickness of the absorber and buffer layers could be optimized. The temperature had a major impact on the CdTe/CdS solar cells as well. The optimized solar cell has an efficiency performance of >14% when exposed to the AM1.5 G spectrum. CdTe 3000 nm, CdS 50 nm, SnO2 500 nm, and (at) T 300k were the I-V characteristics gave the best conversion open circuit voltage (Voc)=0.8317 volts, short circuit current density (Jsc)=23.15 mA/cm2, fill factor (FF)%=77.48, and efficiency (η)%=14.73. The results can be used to provide important guidance for future work on multi-junction solar cell design.

scholarly journals Construction and Study of Hetreojunction Solar Cell Based on Dodecylbenzene Sulfonic Acid-Doped Polyaniline/n-Si

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
I. Morsi ◽  
Sh. Ebrahim ◽  
M. Soliman
Keyword(s):  
Solar Cell ◽  
Sulfonic Acid ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Window Layer ◽  
Shunt Resistance ◽  
Cell Parameters ◽  
Doped Polyaniline ◽  
Dodecylbenzene Sulfonic Acid

Polyaniline/n-type Si heterojunctions solar cell are fabricated by spin coating of soluble dodecylbenzene sulfonic acid (DBSA)-doped polyaniline onto n-type Si substrate. The electrical characterization of the Al/n-type Si/polyaniline/Au (Ag) structure was investigated by using current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy under darkness and illumination. The photovoltaic cell parameters, that is, open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and energy conversion efficiency (η) were calculated. The highestJsc,Voc, and efficiency of these heterojunctions obtained using PANI-DBSA as a window layer (wideband gap) and Au as front contact are 1.8 mA/cm2, 0.436 V, and 0.13%, respectively. From Mott-Schottky plots, it was found that order of charge carrier concentrations is3.5×1014and1.0×1015/cm3for the heterojunctions using Au as front contact under darknessness and illumination, respectively. Impedance study of this type of solar cell showed that the shunt resistance and series resistance decreased under illumination.

Correlation of Hydrogenated Nanocrystalline Silicon Microstructure and Solar Cell Performance

2004 ◽  
Vol 808 ◽  
Author(s):  
Keda Wang ◽  
Anthon Canning ◽  
J.R. Weinberg-Wolf ◽  
E.C.T. Harley ◽  
Daxing Han ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Volume Fraction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Fraction I

ABSTRACTWe used Raman and photoluminescence (PL) spectroscopy to study the relationship between the material properties and the solar cell performance of hydrogenated nanocrystalline silicon (nc-Si:H). The crystalline volume fraction (fc) was deduced from the Raman spectrum. Generally, a high fc leads to a high short circuit current density and a low open circuit voltage. PL spectra were measured using 632.8-nm and 442-nm laser lines. There are two distinguished PL peaks at 80 K, one at ∼1.4 eV originating from the amorphous region, while the other at = 0.9 eV from the nanocrystalline grain boundary regions. Generally, the intensity fraction of this low energy PL peak, IPLc/(IPLa+IPLc), was larger for 442-nm than 632.8-nm excitation, indicating an increase in crystallinity along the growth direction. However, for the best initial performance cells obtained by H2 dilution profiling and the i/p buffer layer, the intensity fraction IPLc/(IPLa+IPLc) decreased from the bulk to the topi/p interface. The Raman and PL results give insight into the correlation between the microstructures and the cell performance, and verified that properly-controlled crystallinity in the intrinsic layer and buffer layer at the i/p interface layer are important for optimizing nc-Si:H solar cells.

scholarly journals Investigation of Cu(In, Ga)Se2 solar cell performance with non-cadmium buffer layer using TCAD-SILVACO

2018 ◽  
Vol 36 (3) ◽  
pp. 514-519
Author(s):  
Bechlaghem Sara ◽  
Zebentout Baya ◽  
Benamara Zineb
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Optical Parameters ◽  
Solar Cell Performance ◽  
Photovoltaic Parameters

AbstractThe purpose of this work is to achieve the best efficiency of Cu(In, Ga)Se2 solar cells by replacing the CdS buffer layer with other nontoxic materials. The simulation tool used in this study is Silvaco-Atlas package based on digital resolution 2D transport equations governing the conduction mechanisms in semiconductor devices. The J-V characteristics are simulated under AM1.5G illumination. Firstly, we will report the modeling and simulation results of CdS/CIGS solar cell, in comparison with the previously reported experimental results [1]. Secondly, the photovoltaic parameters will be calculated with CdS buffer layer and without any buffer layer to understand its impact on the output parameters of solar cells. The simulation is carried out with the use of electrical and optical parameters chosen judiciously for different buffers (CdS, ZnOS and ZnSe). In comparison to simulated CdS/CIGS, the best photovoltaic parameters have been obtained with ZnOS buffer layer. The structure has almost the same open circuit voltage Voc and fill factor FF, and higher short circuit current density Jsc, which results in slightly higher conversion efficiencies.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

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