Abstract
Numerical simulation and experimental techniques were used to investigate lithium fluoride (LiFx) films as an electron extraction layer for the application of silicon heterojunction (SHJ) solar cells, with a focus on the paths toward excellent surface passivation and superior efficiency. The presence of a 7 nm thick hydrogenated intrinsic amorphous silicon (a-Si:H(i)) passivation layer along with thermally evaporated 4 nm thick LiFx resulted in outstanding passivation properties and suppresses the recombination of carriers. As a result, minority carrier lifetime (τeff) as well as implied open-circuit voltage (iVoc) reached up 933 μs and iVoc of 734 mV, accordingly at 120°C annealing temperature. A detailed simulated study was performed for the complete LiFx based SHJ solar cells to achieve superior efficiency. Optimized performance of SHJ solar cells using a LiFx layer thickness of 4 nm with energy bandgap (Eg) of 10.9 eV and the work function of 3.9 eV was shown as: Voc=745.7 mV, Jsc=38.21 mA/cm2, FF=82.17%, and =23.41%. Generally, our work offers an improved understanding of the passivation layer, electron extraction layer, and their combined effects on SHJ solar cells via simulation.
Simulated Study and Surface Passivation of Lithium Fluoride-Based Electron Contact for High-Efficiency Silicon Heterojunction Solar Cells
