Two-photon absorption and the dispersion of nonlinear refraction using a white-light continuum Z-scan

Author(s):  
M. Balu ◽  
J. Hales ◽  
D.J. Hagan ◽  
E.W. Van Stryland
2005 ◽  
Vol 13 (10) ◽  
pp. 3594 ◽  
Author(s):  
Mihaela Balu ◽  
Joel Hales ◽  
David J. Hagan ◽  
Eric W. Van Stryland

2017 ◽  
Vol 111 (7) ◽  
pp. 071901 ◽  
Author(s):  
Aliasghar Ajami ◽  
Wolfgang Husinsky ◽  
Maximilian Tromayer ◽  
Peter Gruber ◽  
Robert Liska ◽  
...  

2002 ◽  
Vol 38 (9) ◽  
pp. 1205-1216 ◽  
Author(s):  
R.A. Negres ◽  
J.M. Hales ◽  
A. Kobyakov ◽  
D.J. Hagan ◽  
E.W. Van Stryland

2008 ◽  
pp. 404-404-20 ◽  
Author(s):  
EW Van Stryland ◽  
H Vanherzeele ◽  
MA Woodall ◽  
MJ Soileau ◽  
AL Smirl ◽  
...  

2018 ◽  
Vol 8 (10) ◽  
pp. 1810 ◽  
Author(s):  
Rihan Wu ◽  
Jack Collins ◽  
Leigh Canham ◽  
Andrey Kaplan

We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4- μ m wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n 2 , and the two-photon absorption (TPA) coefficient, β , from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10 − 6 cm 2 /GW and for p-Si is − 9 ± 3 × 10 − 5 cm 2 /GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.


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