A fully integrated, single-chip handset power amplifier in SiGe BiCMOS for W-CDMA applications

Author(s):  
I. Rippke ◽  
J. Duster ◽  
K. Kornegay
Author(s):  
Apostolos Samelis ◽  
Edward Whittaker ◽  
Michael Ball ◽  
Alasdair Bruce ◽  
John Nisbet ◽  
...  

2000 ◽  
Vol 35 (10) ◽  
pp. 1481-1486 ◽  
Author(s):  
Y. Tan ◽  
M. Kumar ◽  
J.K.O. Sin ◽  
L. Shi ◽  
J. Lau

2015 ◽  
Vol 7 (3-4) ◽  
pp. 407-414 ◽  
Author(s):  
Mekdes G. Girma ◽  
Markus Gonser ◽  
Andreas Frischen ◽  
Jürgen Hasch ◽  
Yaoming Sun ◽  
...  

This paper describes the design considerations, integration issues, packaging, and experimental performance of recently developed D-Band dual-channel transceiver with on-chip antennas fabricated in a SiGe-BiCMOS technology. The design comprises a fully integrated transceiver circuit with quasi-monostatic architecture that operates between 114 and 124 GHz. All analog building blocks are controllable via a serial peripheral interface to reduce the number of connections and facilitate the communication between digital processor and analog building blocks. The two electromagnetically coupled patch antennas are placed on the top of the die with 8.6 dBi gain and have a simulated efficiency of 60%. The chip consumes 450 mW and is wire-bonded into an open-lid 5 × 5 mm2quad-flat no-leads package. Measurement results for the estimation of range, and azimuth angle in single object situation are presented.


Author(s):  
Hyun-Cheol Bae ◽  
Sang-Hoon Kim ◽  
Young-Joo Song ◽  
Sang-Heung Lee ◽  
Ja-Yol Lee ◽  
...  

2011 ◽  
Vol 403-408 ◽  
pp. 2481-2484
Author(s):  
Kang Li ◽  
Guo Dong Huang ◽  
Xiao Feng Yang ◽  
Qian Feng ◽  
Chao Xian Zhu ◽  
...  

A fully integrated S-band high efficiency power amplifier using the TSMC 0.35 um SiGe BiCMOS technology is presented. The two-stage power amplifier has been optimized for the whole S-band covering 2 GHz to 4 GHz frequency band for higher 1-dB compression point and efficiency. The input and output matching networks are designed on chip. From the simulate result, the two-stage power amplifier achieves high PAE of 28% and saturation output power of 23.3 dBm at 3 GHz, with the small signal gain of 18.7 dB. Besides, this PA realizes the PAE within the band of 2.4GHz to 4GHz exceed 25%, and the highest PAE of 30.6% at 3.4 GHz.


2018 ◽  
Vol 8 (3) ◽  
pp. 329-339 ◽  
Author(s):  
Jidan Al-Eryani ◽  
Herbert Knapp ◽  
Jonas Kammerer ◽  
Klaus Aufinger ◽  
Hao Li ◽  
...  

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