A fully integrated flip-chip SiGe BiCMOS power amplifier for 802.11ac applications

2016 ◽  
Author(s):  
Apostolos Samelis ◽  
Edward Whittaker ◽  
Michael Ball ◽  
Alasdair Bruce ◽  
John Nisbet ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Flip Chip ◽  
Fully Integrated ◽  
Sige Bicmos

A wideband fully integrated SiGe BiCMOS medium power amplifier

2005 ◽  
Author(s):  
Hyun-Cheol Bae ◽  
Sang-Hoon Kim ◽  
Young-Joo Song ◽  
Sang-Heung Lee ◽  
Ja-Yol Lee ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Fully Integrated ◽  
Sige Bicmos

A Fully Integrated S-Band Power Amplifier in 0.35um-SiGe BiCMOS Technology

2011 ◽  
Vol 403-408 ◽  
pp. 2481-2484
Author(s):  
Kang Li ◽  
Guo Dong Huang ◽  
Xiao Feng Yang ◽  
Qian Feng ◽  
Chao Xian Zhu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Small Signal ◽  
Two Stage ◽  
Fully Integrated ◽  
Matching Networks ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
On Chip

A fully integrated S-band high efficiency power amplifier using the TSMC 0.35 um SiGe BiCMOS technology is presented. The two-stage power amplifier has been optimized for the whole S-band covering 2 GHz to 4 GHz frequency band for higher 1-dB compression point and efficiency. The input and output matching networks are designed on chip. From the simulate result, the two-stage power amplifier achieves high PAE of 28% and saturation output power of 23.3 dBm at 3 GHz, with the small signal gain of 18.7 dB. Besides, this PA realizes the PAE within the band of 2.4GHz to 4GHz exceed 25%, and the highest PAE of 30.6% at 3.4 GHz.

Fully integrated low-power flip chip bonding of arrayed optoelectronic devices on SOS

2002 ◽  
Author(s):  
Ronald E. Reedy ◽  
Hal Anthony ◽  
Charles Kuznia ◽  
Mike Pendelton ◽  
Jim Cable ◽  
...  
Keyword(s):  
Low Power ◽  
Flip Chip ◽  
Optoelectronic Devices ◽  
Fully Integrated ◽  
Flip Chip Bonding
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