Influence of Pre-Sputtering Technique on Material Properties of BST Thin Films for Tunable Microwave Applications

2020 ◽  
Author(s):  
F. W. Jamaluddin ◽  
M.F Abdul Khalid ◽  
A. S. Zoolfakar ◽  
M. H. Mamat ◽  
N. F. Mohd Nasir
Keyword(s):  
Thin Films ◽  
Material Properties ◽  
Bst Thin Films ◽  
Tunable Microwave ◽  
Microwave Applications

Co-doped BST thin films for tunable microwave applications

2011 ◽  
Vol 205 (8-9) ◽  
pp. 2989-2993 ◽  
Author(s):  
Li Xiao ◽  
Kwang-Leong Choy ◽  
Ian Harrison
Keyword(s):  
Thin Films ◽  
Bst Thin Films ◽  
Tunable Microwave ◽  
Microwave Applications ◽  
Co Doped

Frequency Agile BST Thin Films for RF/Microwave Applications

2002 ◽  
Vol 271 (1) ◽  
pp. 131-136 ◽  
Author(s):  
Jeffrey Bellotti ◽  
E. Koray Akdogan ◽  
Ahmad Safari ◽  
Wontae Chang ◽  
Jeffrey Pond
Keyword(s):  
Thin Films ◽  
Bst Thin Films ◽  
Frequency Agile ◽  
Microwave Applications ◽  
Rf Microwave

Characterization of doped BST thin films deposited by sol-gel for tunable microwave devices

2010 ◽  
Vol 57 (5) ◽  
pp. 1029-1033 ◽  
Author(s):  
Abderrazek Khalfallaoui ◽  
Gabriel Velu ◽  
Ludovic Burgnies ◽  
Jean-Claude Carru
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Microwave Devices ◽  
Bst Thin Films ◽  
Tunable Microwave

Investigation of BZT thin films for tunable microwave applications

2005 ◽  
Vol 25 (12) ◽  
pp. 2289-2293 ◽  
Author(s):  
Jin Xu ◽  
Wolfgang Menesklou ◽  
Ellen Ivers-Tiffée
Keyword(s):  
Thin Films ◽  
Tunable Microwave ◽  
Microwave Applications

Processing and Characterization of Pure and Doped Ba0.6Sr0.4TiO3 Thin Films for Tunable Microwave Applications

2000 ◽  
Vol 656 ◽  
Author(s):  
P. C. Joshi ◽  
M. W. Cole ◽  
E. Ngo ◽  
C. W. Hubbard
Keyword(s):  
Thin Films ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Microwave Devices ◽  
Silicon Substrates ◽  
Electrical Measurements ◽  
Bst Thin Films ◽  
Tunable Microwave ◽  
Current Characteristics ◽  
And Control

ABSTRACTBa1−xSrxTiO3 thin films are being developed for high-density DRAM devices. The nonlinearity of its dielectric properties with respect to applied dc voltage makes it attractive for tunable microwave devices. For successful integration into microwave devices, extremely reliable Ba1−xSrxTiO3 thin films with enhanced dielectric and insulating properties are desired. Properties of Ba1−xSrxTiO3are typically varied by changing the Ba/Sr ratio and/or doping. In this paper, we reports on the effects of acceptor and donor doping on the microstructural and electrical properties of Ba0.6Sr0.4TiO3 (BST) thin films deposited by metalorganic solution deposition technique on platinum coated silicon substrates. The effects of doping on structure, dielectric permittivity, dielectric loss tangent, and leakage current have been analyzed. The structure of the films was analyzed by x-ray diffraction (XRD). The surface morphology of the films was examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on MIM capacitors using Pt as the top and bottom electrode. It was possible to significantly improve the dielectric loss and leakage current characteristics, and control the dielectric tunability by doping the BST thin films.

DIELECTRIC PROPERTIES OF PARAELECTRIC Ba(Zr,Ti)O 3 THIN FILMS FOR TUNABLE MICROWAVE APPLICATIONS

2005 ◽  
Vol 77 (1) ◽  
pp. 93-99 ◽  
Author(s):  
SU-JAE LEE ◽  
MIN-HWAN KWAK ◽  
SEUNG EON MOON ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Tunable Microwave ◽  
Microwave Applications
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