Characterization of doped BST thin films deposited by sol-gel for tunable microwave devices

2010 ◽  
Vol 57 (5) ◽  
pp. 1029-1033 ◽  
Author(s):  
Abderrazek Khalfallaoui ◽  
Gabriel Velu ◽  
Ludovic Burgnies ◽  
Jean-Claude Carru
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Microwave Devices ◽  
Bst Thin Films ◽  
Tunable Microwave

Processing and Characterization of Pure and Doped Ba0.6Sr0.4TiO3 Thin Films for Tunable Microwave Applications

2000 ◽  
Vol 656 ◽  
Author(s):  
P. C. Joshi ◽  
M. W. Cole ◽  
E. Ngo ◽  
C. W. Hubbard
Keyword(s):  
Thin Films ◽  
Dielectric Loss ◽  
Leakage Current ◽  
Microwave Devices ◽  
Silicon Substrates ◽  
Electrical Measurements ◽  
Bst Thin Films ◽  
Tunable Microwave ◽  
Current Characteristics ◽  
And Control

ABSTRACTBa1−xSrxTiO3 thin films are being developed for high-density DRAM devices. The nonlinearity of its dielectric properties with respect to applied dc voltage makes it attractive for tunable microwave devices. For successful integration into microwave devices, extremely reliable Ba1−xSrxTiO3 thin films with enhanced dielectric and insulating properties are desired. Properties of Ba1−xSrxTiO3are typically varied by changing the Ba/Sr ratio and/or doping. In this paper, we reports on the effects of acceptor and donor doping on the microstructural and electrical properties of Ba0.6Sr0.4TiO3 (BST) thin films deposited by metalorganic solution deposition technique on platinum coated silicon substrates. The effects of doping on structure, dielectric permittivity, dielectric loss tangent, and leakage current have been analyzed. The structure of the films was analyzed by x-ray diffraction (XRD). The surface morphology of the films was examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on MIM capacitors using Pt as the top and bottom electrode. It was possible to significantly improve the dielectric loss and leakage current characteristics, and control the dielectric tunability by doping the BST thin films.

Characterization of doped BST thin films prepared by a modified sol gel method

1995 ◽  
Vol 10 (1-4) ◽  
pp. 113-121 ◽  
Author(s):  
Miroslav Sedlar ◽  
Michael Sayer ◽  
Vasant Chivukula
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Bst Thin Films

Processing and properties of BST thin films for tunable microwave devices

2004 ◽  
Vol 24 (6) ◽  
pp. 1735-1739 ◽  
Author(s):  
Jin Xu ◽  
Wolfgang Menesklou ◽  
Ellen Ivers-Tiffée
Keyword(s):  
Thin Films ◽  
Microwave Devices ◽  
Bst Thin Films ◽  
Tunable Microwave

Characterization of SrBi2Nb2O9 Thin Films Prepared by Sol Gel Technique

1996 ◽  
Vol 459 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
D. Ravichandran ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Band ◽  
Sol Gel ◽  
Orthorhombic Symmetry ◽  
X Ray Diffraction ◽  
Ft Ir ◽  
Gel Technique ◽  
High Degree ◽  
First Time

ABSTRACTThin films of SrBi2Nb2O9 (SBN) with thicknesses of 0.1, 0.2, and 0.4 μ were grown by Sol-gel technique on silicon, and annealed at 650°C. The SBN films were investigated by Raman scatering for the first time. Raman spectra in some of the samples present bands around 60, 167, 196, 222, 302, 451, 560, 771, 837, and 863 cm−1, which correspond to the SBN formation. The study indicates that the films are inhomogeneous, and only in samples with thicknesses 0.4 μ the SBN material was found in some places. The prominent Raman band around 870 cm−1, which is the A1g mode of the orthorhombic symmetry, is assigned to the symmetric stretching of the NbO6 octahedrals. The frequency of this band is found to shift in different places in the same sample, as well as from sample to sample. The frequency shifts and the width of the Raman bands are discussed in term of ions in non-equilibrium positions. FT-IR spectra reveal a sharp peak at 1260 cm−1, and two broad bands around 995 and 772 cm−1. The bandwidths of the latter two bands are believed to be associated with the presence of a high degree of defects in the films. The experimental results of the SBN films are compared with those obtained in SBT (T=Ta) films. X-ray diffraction and SEM techniques are also used for the structural characterization.

Ba x Sr 1 − x TiO 3 Thin Films for Tunable Microwave Devices in Cryogenic and Room Temperature Application

2008 ◽  
Vol 367 (1) ◽  
pp. 170-178 ◽  
Author(s):  
P. M. Suherman ◽  
H. T. Su ◽  
T. J. Jackson ◽  
F. Huang ◽  
M. J. Lancaster
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Microwave Devices ◽  
Tunable Microwave ◽  
Temperature Application

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

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