Atomistic simulations of ion implantation and diffusion

Author(s):  
G.H. Gilmer ◽  
L. Pelaz ◽  
M. Jaraiz ◽  
H.-J. Gossmann ◽  
C.S. Rafferty
2005 ◽  
Vol 71 (20) ◽  
Author(s):  
J. Kotakoski ◽  
A. V. Krasheninnikov ◽  
Yuchen Ma ◽  
A. S. Foster ◽  
K. Nordlund ◽  
...  

2018 ◽  
Vol 8 (6) ◽  
pp. 1436-1442
Author(s):  
Pierre Bellanger ◽  
Albert Minj ◽  
Alain Fave ◽  
Zakaria Djebbour ◽  
Stephane Roques ◽  
...  

1998 ◽  
Vol 1 (1) ◽  
pp. 17-25 ◽  
Author(s):  
Aditya Agarwal ◽  
H.-J Gossmann ◽  
D.J Eaglesham ◽  
L Pelaz ◽  
S.B Herner ◽  
...  

2013 ◽  
Vol 121 (1420) ◽  
pp. 1004-1007 ◽  
Author(s):  
Minako HASHIGUCHI ◽  
Isao SAKAGUCHI ◽  
Naoya SAKAMOTO ◽  
Hisayoshi YURIMOTO ◽  
Shunichi HISHITA ◽  
...  

Author(s):  
A. La Ferla ◽  
G. Galvagno ◽  
S. Rinaudo ◽  
V. Raineri ◽  
G. Franco ◽  
...  

2000 ◽  
Vol 647 ◽  
Author(s):  
M. Strobel ◽  
K.-H. Heinig ◽  
W. Möller

AbstractIon implantation, specified by parameters like ion energy, ion fluence, ion flux and sub-strate temperature, has become a well-established tool to synthesize buried low-dimensional nanostructures. In general, in ion beam synthesis the evolution of nanostructures is determined by the competition between ballistic and thermodynamic effects. A kinetic 3D lattice Monte-Carlo model is introduced, which allows for a proper incorporation of collisional mixing and phase separation within supersaturated solid-solutions. It is shown, that for both the ballistically and thermodynamically dominated regimes, the Gibbs-Thomson relation is the key ingredient in understanding nanocluster evolution. Various aspects of precipitate evolution during implantation, formation of ordered arrays of nanophase domains by focused ion implantation and compound nanocluster synthesis are discussed.


2012 ◽  
Vol 101 (2) ◽  
pp. 021905 ◽  
Author(s):  
Y. Wang ◽  
D. H. Zhang ◽  
X. Z. Chen ◽  
Y. J. Jin ◽  
J. H. Li ◽  
...  

1996 ◽  
Vol 441 ◽  
Author(s):  
Wen-Jie Qi ◽  
Zhi-Sheng Wang ◽  
Zhi-Guang Gu ◽  
Guo-Ping Ru ◽  
Guo-Bao Jialig ◽  
...  

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.


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