Structure of GaN grown from vapour phase on a seeded layer of gallium melt formed on a boron nitride ceramic substrate

In this study, two empirical models for the growth of millimetre–thick GaN material with either highly ordered textured or polycrystalline structure on a ceramic substrate by Hydride Vapour Phase Epitaxy (HVPE) are considered. It is suggested that the specific type of the structure of GaN is determined at the nucleation stage and depends on the character of the wetting of the surface of the substrate by the liquid gallium melt.

Microstructure and composition dependence of mechanical characteristics of nanoimprinted AlCoCrFeNi high-entropy alloys

Molecular dynamics is applied to explore the deformation mechanism and crystal structure development of the AlCoCrFeNi high-entropy alloys under nanoimprinting. The influences of crystal structure, alloy composition, grain size, and twin boundary distance on the mechanical properties are carefully analyzed. The imprinting load indicates that the highest loading force is in ascending order with polycrystalline, nano-twinned (NT) polycrystalline, and monocrystalline. The change in alloy composition suggests that the imprinting force increases as the Al content in the alloy increases. The reverse Hall–Petch relation found for the polycrystalline structure, while the Hall–Petch and reverse Hall–Petch relations are discovered in the NT-polycrystalline, which is due to the interactions between the dislocations and grain/twin boundaries (GBs/TBs). The deformation behavior shows that shear strain and local stress are concentrated not only around the punch but also on GBs and adjacent to GBs. The slide and twist of the GBs play a major in controlling the deformation mechanism of polycrystalline structure. The twin boundary migrations are detected during the nanoimprinting of the NT-polycrystalline. Furthermore, the elastic recovery of material is insensitive to changes in alloy composition and grain size, and the formability of the pattern is higher with a decrease in TB distance.

Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering

High-crystalline aluminum nitride (AlN) thin films are essential for device applications, and epitaxial growth is a promising approach to improve their crystalline quality. However, a high substrate temperature is usually required for the epitaxial growth, which is not compatible with the complementary metal-oxide-semiconductor (CMOS) process. Furthermore, it is very difficult to obtain epitaxial AlN thin films on the deposited metal layers that are sometimes necessary for the bottom electrodes. In this work, epitaxial AlN thin films were successfully prepared on a molybdenum (Mo) electrode/sapphire substrate using reactive sputtering at a low substrate temperature. The structural properties, including the out-of-plane and in-plane relationships between the AlN thin film and the substrate, were investigated using X-ray diffraction (XRD) 2θ-ω, rocking curve, and pole figure scans. Additional analyses using scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) were also carried out. It was shown that highly c-axis-oriented AlN thin films were grown epitaxially on the Mo/sapphire substrate with an in-plane relationship of AlN [112¯0]//sapphire [101¯0]. This epitaxial growth was attributed to the highly ordered and oriented Mo electrode layer grown on the sapphire substrate. In contrast, the AlN deposition on the Mo/SiO2/Si substrate under the same conditions caused poorly oriented films with a polycrystalline structure. There coexisted two different low-crystalline phases of Mo (110) and Mo (211) in the Mo layer on the SiO2/Si substrate, which led to the high mosaicity and polycrystalline structure of the AlN thin films.

Grain polydispersity and coherent crystal reorientations are features to foster stress hotspots in polycrystalline alloys under load

The mechanical properties of metallic alloys are controlled through the design of their polycrystalline structure via heat treatments. For single-phase microstructures, they aim to achieve a particular average grain diameter to leverage stress hardening or softening. The stochastic nature of the recrystallization process generates a grain size distribution, and the randomness of the crystallographic orientation determines the anisotropy of a mechanical response. We developed a multiscale computational formalism to capture the collective mechanical response of polycrystalline microstructures at unprecedented length scales. We found that for an averaged grain size, the mechanical response is highly dependent on the grain size distribution. The simulations reveal the topological conditions that promote coherent grain texturization and grain growth inhibition during stress relaxation. We identify the microstructural features that are responsible for the appearance of stress hotspots. Our results provide the elusive evidence of how stress hotspots are ideal precursors for plastic and creep failure.