Electrical properties of polyethylene modified by ion implantation and diffusion

2000 ◽  
Vol 166-167 ◽  
pp. 655-659 ◽  
Author(s):  
V.B Odzhaev ◽  
V.N Popok ◽  
E.I Kozlova ◽  
O.N Jankovskij ◽  
I.A Karpovich
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
And Diffusion

Electrical properties of polyethylene modified by multistage ion implantation

Vacuum ◽  
2001 ◽  
Vol 63 (4) ◽  
pp. 581-583 ◽  
Author(s):  
V.B Odzhaev ◽  
O.N Jankovsky ◽  
I.A Karpovich ◽  
J Partyka ◽  
P Węgierek
Keyword(s):  
Electrical Properties ◽  
Ion Implantation

The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

2021 ◽  
Vol 47 (2) ◽  
pp. 189-192
Author(s):  
A. V. Voitsekhovskii ◽  
S. N. Nesmelov ◽  
S. M. Dzyadukh ◽  
V. S. Varavin ◽  
S. A. Dvoretskii ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Surface Layers ◽  
Near Surface

Silicon Tunnel Junctions Produced by Ion Implantation and Diffusion Processes for Tandem Solar Cells

2018 ◽  
Vol 8 (6) ◽  
pp. 1436-1442
Author(s):  
Pierre Bellanger ◽  
Albert Minj ◽  
Alain Fave ◽  
Zakaria Djebbour ◽  
Stephane Roques ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Diffusion Processes ◽  
Tunnel Junctions ◽  
Tandem Solar Cells ◽  
And Diffusion

Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation

2014 ◽  
Vol 778-780 ◽  
pp. 575-578 ◽  
Author(s):  
Tomasz Sledziewski ◽  
Aleksey Mikhaylov ◽  
Sergey A. Reshanov ◽  
Adolf Schöner ◽  
Heiko B. Weber ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Interface Traps ◽  
Ion Energy ◽  
Residual P ◽  
Conductance Method ◽  
Secondary Ion

The effect of phosphorus (P) on the electrical properties of the 4H-SiC / SiO2interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found fromC-Vmeasurements. Conductance method measurements revealed a significant reduction of density of interface trapsDitwith energyEC- Eit> 0.3 V for P+-implanted samples with [P]interface= 1.5 1018cm-3in the SiC layer at the interface.

Electrical properties of amorphous NI-B films prepared by ion implantation and sputtering

1986 ◽  
Vol 87 (1-2) ◽  
pp. 116-122 ◽  
Author(s):  
A. Benyagoub ◽  
L. Thomé ◽  
A. Audouard ◽  
A. Chamberod ◽  
K. Królas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation

Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon

1998 ◽  
Vol 1 (1) ◽  
pp. 17-25 ◽  
Author(s):  
Aditya Agarwal ◽  
H.-J Gossmann ◽  
D.J Eaglesham ◽  
L Pelaz ◽  
S.B Herner ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
And Diffusion

scholarly journals Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process

AIP Advances ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 015045
Author(s):  
C.-M. Lim ◽  
Z. Zhao ◽  
K. Sumita ◽  
K. Toprasertpong ◽  
M. Takenaka ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Implantation Dose ◽  
Hydrogen Ion ◽  
Insulator Layers ◽  
Hydrogen Ion Implantation
Sign in / Sign up

Export Citation Format

Share Document