A novel double heterojunction bipolar transistor for power amplifiers

ICSE 2000. 2000 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.00EX425) ◽

10.1109/smelec.2000.932448 ◽

2002 ◽

Author(s):

Yue-ming Hsin ◽

Chih-Hsien Lin ◽

Chang-Chung Fan ◽

Man-Fang Huang ◽

Kun-Chuan Lin

Keyword(s):

Power Amplifiers ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction

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InP double heterojunction bipolar transistor linear-efficient power amplifiers

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) ◽

10.1109/mwscas.2001.986303 ◽

2002 ◽

Author(s):

L. Kehias ◽

M. Calcatera ◽

T. Jenkins ◽

T. Quach ◽

P. Watson ◽

...

Keyword(s):

Power Amplifiers ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction ◽

Efficient Power

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InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor

Electronics Letters ◽

10.1049/el:20020201 ◽

2002 ◽

Vol 38 (6) ◽

pp. 289 ◽

Author(s):

B.P. Yan ◽

C.C. Hsu ◽

X.Q. Wang ◽

E.S. Yang

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction

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A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791631 ◽

2002 ◽

Author(s):

W.C. Liu ◽

W.C. Wang ◽

W.L. Chang ◽

K.H. Yu ◽

S.C. Feng ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction ◽

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Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor

Journal of Applied Physics ◽

10.1063/1.1428100 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1601-1605 ◽

Author(s):

M. Yee ◽

P. A. Houston ◽

J. P. R. David

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Saturation Velocity ◽

Double Heterojunction

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Nonequilibrium electron transport in an AlGaAs/GaAs double‐heterojunction bipolar transistor

Journal of Applied Physics ◽

10.1063/1.341625 ◽

1988 ◽

Vol 64 (5) ◽

pp. 2767-2769 ◽

Author(s):

K. Taira ◽

H. Kawai ◽

K. Kaneko

Keyword(s):

Electron Transport ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Nonequilibrium Electron ◽

Double Heterojunction

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A THz InGaAs/InP double heterojunction bipolar transistor withfmax= 325 GHz and BVCBO= 10.6 V

Journal of Semiconductors ◽

10.1088/1674-4926/34/5/054006 ◽

2013 ◽

Vol 34 (5) ◽

pp. 054006 ◽

Author(s):

Wei Cheng ◽

Yuan Wang ◽

Yan Zhao ◽

Haiyan Lu ◽

Hanchao Gao ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction

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InP double heterojunction bipolar transistor as sub-terahertz detector

2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) ◽

10.1109/irmmw-thz.2014.6956515 ◽

2014 ◽

Author(s):

D. Coquillat ◽

V. Nodjiadjim ◽

A. Konczykowska ◽

M. Riet ◽

N. Dyakonova ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Terahertz Detector ◽

Double Heterojunction

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InP double heterojunction bipolar transistor for detection above 1 THz

2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) ◽

10.1109/irmmw-thz.2015.7327777 ◽

2015 ◽

Author(s):

D. Coquillat ◽

V. Nodjiadjim ◽

A. Konczykowska ◽

N. Dyakonova ◽

C. Consejo ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction

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Design and characterization of a negative resistance Common Emitter InP Double Heterojunction Bipolar Transistor subcircuit for millimeter wave and submillimeter wave applications

2014 44th European Microwave Conference ◽

10.1109/eumc.2014.6986589 ◽

2014 ◽

Author(s):

Clive Poole ◽

Izzat Darwazeh ◽

Herbert Zirath ◽

Klas Eriksson ◽

Dan Kuylenstierna ◽

...

Keyword(s):

Millimeter Wave ◽

Negative Resistance ◽

Submillimeter Wave ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction

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Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers

Applied Physics Letters ◽

10.1063/1.1891270 ◽

2005 ◽

Vol 86 (14) ◽

pp. 143508 ◽

Author(s):

Ting-Chen Hu ◽

M. F. Chang ◽

Nils Weimann ◽

Jianxin Chen ◽

Young-Kai Chen

Keyword(s):

Surface Roughness ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction ◽

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