1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791631 ◽

2002 ◽

Author(s):

W.C. Liu ◽

W.C. Wang ◽

W.L. Chang ◽

K.H. Yu ◽

S.C. Feng ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Double Heterojunction ◽

Wide Gap

Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791634 ◽

2002 ◽

Cited By ~ 6

Author(s):

G.A. Umana-Membreno ◽

J.M. Dell ◽

B.D. Nener ◽

L. Faraone ◽

G. Parish ◽

...

Keyword(s):

Low Temperature ◽

Frequency Dispersion ◽

Shallow Trap

Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791701 ◽

2002 ◽

Author(s):

S. Fatima ◽

J. Wong-Leung ◽

J. Fitzgerald ◽

C. Jagadish

Keyword(s):

Comparative Study ◽

Structural Characterization ◽

P Type

Low frequency noise in HgCdTe 3-5 micron IR photovoltaic detectors at elevated temperatures

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791665 ◽

2002 ◽

Cited By ~ 2

Author(s):

M.H. Rais ◽

C.A. Musca ◽

J.M. Dell ◽

J. Antoszewski ◽

B.D. Nener

Keyword(s):

Elevated Temperatures ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Photovoltaic Detectors

Quantum well infrared photodetectors for long wavelength infrared imaging applications

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791602 ◽

2002 ◽

Author(s):

S.V. Bandara ◽

S.D. Gunapala ◽

J.K. Liu ◽

E.M. Luong ◽

J.M. Mumolo ◽

...

Keyword(s):

Quantum Well ◽

Infrared Imaging ◽

Infrared Photodetectors ◽

Long Wavelength ◽

Quantum Well Infrared Photodetectors ◽

Long Wavelength Infrared

Optical properties of interdiffused quantum well modulators

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791586 ◽

2002 ◽

Author(s):

E.H. Li ◽

W.C.H. Choy

Keyword(s):

Optical Properties ◽

Quantum Well

Performance of externally tuned fibre Fabry-Perot transmission modulators

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791700 ◽

2002 ◽

Author(s):

M.G. Xu ◽

B.D. Nener ◽

J.M. Dell

Keyword(s):

Fabry Perot

Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791660 ◽

2002 ◽

Author(s):

L.V. Dao ◽

M.B. Johnston ◽

M. Gal ◽

L. Fu ◽

H.H. Tan ◽

...

Keyword(s):

Quantum Well ◽

Frequency Response ◽

Quantum Well Devices

In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791638 ◽

2002 ◽

Author(s):

Heedon Hwang ◽

Tae-Wan Lee ◽

Youngboo Moon ◽

Euijoon Yoon ◽

Young Dong Kim

Keyword(s):

Quantum Well ◽

Exchange Reaction ◽

In Situ Observation ◽

Quantum Well Structures

Photoluminescence from higher-subbands of GaAs/AlAs superlattices

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) ◽

10.1109/commad.1998.791677 ◽

2002 ◽

Author(s):

C. Domoto ◽

N. Ohtani ◽

P.O. Vaccaro

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs

Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

Low frequency noise in HgCdTe 3-5 micron IR photovoltaic detectors at elevated temperatures

Quantum well infrared photodetectors for long wavelength infrared imaging applications

Optical properties of interdiffused quantum well modulators

Performance of externally tuned fibre Fabry-Perot transmission modulators

Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices

In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

Photoluminescence from higher-subbands of GaAs/AlAs superlattices

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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs

Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions

Low frequency noise in HgCdTe 3-5 micron IR photovoltaic detectors at elevated temperatures

Quantum well infrared photodetectors for long wavelength infrared imaging applications

Optical properties of interdiffused quantum well modulators

Performance of externally tuned fibre Fabry-Perot transmission modulators

Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices

In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

Photoluminescence from higher-subbands of GaAs/AlAs superlattices

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
Latest Publications