Device Performance and Strain Effect of Sub-5 nm Monolayer InP Transistors

Indium phosphide (InP) has higher electron mobility, electron saturation velocity, and drain current than silicon (Si), and the ultra-thin (UT) InP field-effect transistor (FET) probably possesses a better device performance...

On a One-Dimensional Hydrodynamic Model for Semiconductors with Field-Dependent Mobility

We consider a one-dimensional, isentropic, hydrodynamical model for a unipolar semiconductor, with the mobility depending on the electric field. The mobility is related to the momentum relaxation time, and field-dependent mobility models are commonly used to describe the occurrence of saturation velocity, that is, a limit value for the electron mean velocity as the electric field increases. For the steady state system, we prove the existence of smooth solutions in the subsonic case, with a suitable assumption on the mobility function. Furthermore, we prove uniqueness of subsonic solutions for sufficiently small currents.

Design and modeling of a planar graphene structure as a terahertz cyclotron radiation source

With incredibly high carrier mobility and saturation velocity, graphene would be an ideal candidate for a miniaturized solid-state cyclotron radiation source. A planar semicircular graphene arc geometry was investigated for emission in the 0.5–1.5 THz range. Analytical studies, confirmed by finite element simulations, show that the emitted THz frequencies are inversely proportional to the arc radius given a fixed charge-carrier velocity. The simulations show that the desired frequency spectrum can be obtained with design radii ranging from 50 to 150 nm. Interestingly, the radiated spectrum is independent of the frequency of the stimulation of the graphene nano-arcs. The simulations also indicate that the total output power correlates well with the Larmor formulation. The device is expected to emit 1 nW/cm2, which confirms the findings of existing research in this field. Such a design could yield a scalable and cost-effective THz source.

Review of Recent Progress on Vertical GaN-Based PN Diodes

As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

Design and modeling of a planar graphene structure as a terahertz cyclotron radiation source

With incredibly high carrier mobility and saturation velocity, graphene would be an ideal candidate for a miniaturized solid-state cyclotron radiation source. A planar semicircular graphene arc geometry was investigated for emission in the 0.5 THz to 1.5 THz range. Analytical studies, confirmed by finite element simulations, show that the emitted THz frequencies are inversely proportional to the arc radius given a fixed charge-carrier velocity. The simulations show that the desired frequency spectrum can be obtained with design radii ranging from 50 nm to 150 nm. Interestingly, the radiated spectrum is independent of the frequency of the stimulation of the graphene nano-arcs. The simulations also indicate that the total output power correlates well with the Larmor formulation. The device is expected to emit 1 nW/cm2, which confirms the findings of existing research in this field. Such a design could yield a scalable and cost-effective THz source.