A Complete Characterization of Integral Input-to-State Stability and Its Small-Gain Theorem for Stochastic Systems

2020 ◽  
Vol 65 (7) ◽  
pp. 3039-3052 ◽  
Author(s):  
Hiroshi Ito
Keyword(s):  
Stochastic Systems ◽  
Complete Characterization ◽  
Small Gain Theorem ◽  
Small Gain

A small gain theorem for linear stochastic systems

1997 ◽  
Vol 30 (5) ◽  
pp. 243-251 ◽  
Author(s):  
Vasile Dragan ◽  
Aristide Halanay ◽  
Adrian Stoica
Keyword(s):  
Stochastic Systems ◽  
Small Gain Theorem ◽  
Linear Stochastic Systems ◽  
Small Gain

Experimental Characterization of Mechanical Behavior of Cord-Rubber Composites

1982 ◽  
Vol 10 (1) ◽  
pp. 37-54 ◽  
Author(s):  
M. Kumar ◽  
C. W. Bert
Keyword(s):  
Response Characteristic ◽  
Cord Compression ◽  
Complete Characterization ◽  
Strain Response ◽  
Strain Gages ◽  
Experimental Characterization ◽  
Rubber Composites ◽  
Stress Strain ◽  
Strain Data

Abstract Unidirectional cord-rubber specimens in the form of tensile coupons and sandwich beams were used. Using specimens with the cords oriented at 0°, 45°, and 90° to the loading direction and appropriate data reduction, we were able to obtain complete characterization for the in-plane stress-strain response of single-ply, unidirectional cord-rubber composites. All strains were measured by means of liquid mercury strain gages, for which the nonlinear strain response characteristic was obtained by calibration. Stress-strain data were obtained for the cases of both cord tension and cord compression. Materials investigated were aramid-rubber, polyester-rubber, and steel-rubber.

Characterization of CMOS Structures (0.6 µm process) Submitted to HBM and COM ESD Stress Tests

1997 ◽  
Author(s):  
G. Meneghesso ◽  
E. Zanoni ◽  
P. Colombo ◽  
M. Brambilla ◽  
R. Annunziata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electrostatic Discharge ◽  
Stress Test ◽  
Complete Characterization ◽  
Stress Tests ◽  
Test Procedures ◽  
Emission Microscopy ◽  
Fast Rise ◽  
Scanning Electron

Abstract In this work, we present new results concerning electrostatic discharge (ESD) robustness of 0.6 μm CMOS structures. Devices have been tested according to both HBM and socketed CDM (sCDM) ESD test procedures. Test structures have been submitted to a complete characterization consisting in: 1) measurement of the tum-on time of the protection structures submitted to pulses with very fast rise times; 2) ESD stress test with the HBM and sCDM models; 3) failure analysis based on emission microscopy (EMMI) and Scanning Electron Microscopy (SEM).

scholarly journals Complete characterization of spin chains with two Ising symmetries

2019 ◽  
Vol 125 (1) ◽  
pp. 10008 ◽  
Author(s):  
Bat-el Friedman ◽  
Atanu Rajak ◽  
Emanuele G. Dalla Torre
Keyword(s):  
Complete Characterization ◽  
Spin Chains
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