Beamforming Lens Antenna on a High Resistivity Silicon Wafer for 60 GHz WPAN

2010 ◽  
Vol 58 (3) ◽  
pp. 706-713 ◽  
Author(s):  
Woosung Lee ◽  
Jaeheung Kim ◽  
Choon Sik Cho ◽  
Young Joong Yoon
Keyword(s):  
Silicon Wafer ◽  
High Resistivity ◽  
60 Ghz ◽  
Lens Antenna ◽  
High Resistivity Silicon

60 GHz high resistivity silicon on insulator interdigitated dipole antenna

2010 ◽  
Vol 52 (5) ◽  
pp. 1197-1201 ◽  
Author(s):  
M. H. Barakat ◽  
C. Delaveaud ◽  
F. Ndagijimana
Keyword(s):  
Dipole Antenna ◽  
Silicon On Insulator ◽  
High Resistivity ◽  
60 Ghz ◽  
High Resistivity Silicon

Radiation measurement of 60 GHz high resistivity silicon on insulator double slot antenna

2011 ◽  
Vol 53 (12) ◽  
pp. 2861-2865 ◽  
Author(s):  
Moussa H. Barakat ◽  
Christophe Delaveaud ◽  
Fabien Ndagijimana
Keyword(s):  
Silicon On Insulator ◽  
Slot Antenna ◽  
High Resistivity ◽  
Radiation Measurement ◽  
60 Ghz ◽  
High Resistivity Silicon

TMAH Etching of Silicon Wafer for Detector Fabrication

2014 ◽  
Vol 901 ◽  
pp. 15-20
Author(s):  
Lin Qi ◽  
Min Yu ◽  
Shao Nan Wang ◽  
Hong Zhi Liu ◽  
Bao Hua Shi ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Silicon Surface ◽  
Etch Rate ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Solution Concentration ◽  
Wet Etching ◽  
High Resistivity ◽  
Large Area ◽  
High Resistivity Silicon

Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity silicon, whereas the etching of high resistivity silicon was seldom studied by the industry. This work focused on the research of TMAH etching of high resistivity lager area silicon wafer aiming at its application in silicon radiation detector fabrication. We investigated the etching properties of TMAH of 4 inch (111) silicon wafers. Various parameters combinations were explored, such as TMAH solution concentration of 25wt%, 15wt% and 5wt%, and temperature of 95 °C, 90 °C and 85 °C. Etch rate, etch uniformity and silicon surface roughness were observed.

Design of terahertz band-stop filter based on a metallic resonator on high-resistivity silicon wafer

2013 ◽  
Vol 56 (9) ◽  
pp. 2238-2242 ◽  
Author(s):  
JinLing Zhang ◽  
Yu Zhang ◽  
Ke Gao ◽  
YuLei Du ◽  
Nan Zhang ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
High Resistivity ◽  
Terahertz Band ◽  
Band Stop Filter ◽  
High Resistivity Silicon

scholarly journals Fabrication of a 77 GHz Rotman Lens on a High Resistivity Silicon Wafer Using Lift-Off Process

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
Ali Attaran ◽  
Sazzadur Chowdhury
Keyword(s):  
Silicon Wafer ◽  
Beam Steering ◽  
Horn Antenna ◽  
Spectrum Analyzer ◽  
High Resistivity ◽  
Lift Off ◽  
Footprint Area ◽  
Silicon Based ◽  
High Resistivity Silicon ◽  
77 Ghz

Fabrication of a high resistivity silicon based microstrip Rotman lens using a lift-off process has been presented. The lens features 3 beam ports, 5 array ports, 16 dummy ports, and beam steering angles of ±10 degrees. The lens was fabricated on a 200 μm thick high resistivity silicon wafer and has a footprint area of 19.7 mm × 15.6 mm. The lens was tested as an integral part of a 77 GHz radar where a tunable X band source along with an 8 times multiplier was used as the RF source and the resulting millimeter wave signal centered at 77 GHz was radiated through a lens-antenna combination. A horn antenna with a downconverter harmonic mixer was used to receive the radiated signal and display the received signal in an Advantest R3271A spectrum analyzer. The superimposed transmit and receive signal in the spectrum analyzer showed the proper radar operation confirming the Rotman lens design.

JFET FOR COMPLETELY DEPLETED HIGH RESISTIVITY SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-363-C4-366 ◽  
Author(s):  
V. RADEKA ◽  
P. REHAK ◽  
S. RESCIA ◽  
E. GATTI ◽  
A. LONGONI ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon
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