scholarly journals Extraction of Front- and Rear-Interface Recombination in Silicon Double-Heterojunction Solar Cells by Reverse Bias Transients

2017 ◽  
Vol 64 (11) ◽  
pp. 4518-4525 ◽  
Author(s):  
Alexander H. Berg ◽  
Ken A. Nagamatsu ◽  
James C. Sturm
Keyword(s):  
Solar Cells ◽  
Reverse Bias ◽  
Heterojunction Solar Cells ◽  
Interface Recombination ◽  
Double Heterojunction

Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells

2014 ◽  
Vol 312 ◽  
pp. 145-151 ◽  
Author(s):  
Miroslav Mikolášek ◽  
Patrik Príbytný ◽  
Daniel Donoval ◽  
Juraj Marek ◽  
Aleš Chvála ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Heterojunction Solar Cells ◽  
Interface Recombination ◽  
Silicon Heterojunction Solar Cells

Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

2011 ◽  
Vol 32 (7) ◽  
pp. 922-924 ◽  
Author(s):  
Mu-Tao Chu ◽  
Wen-Yih Liao ◽  
Ray-Hua Horng ◽  
Tsung-Yen Tsai ◽  
Tsai-Bau Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Heterojunction Solar Cells ◽  
Sapphire Substrates ◽  
Double Heterojunction ◽  
Patterned Sapphire Substrates

scholarly journals III-Nitride Double-Heterojunction Solar Cells With High In-Content InGaN Absorbing Layers: Comparison of Large-Area and Small-Area Devices

2016 ◽  
Vol 6 (2) ◽  
pp. 460-464 ◽  
Author(s):  
Chloe A. M. Fabien ◽  
Aymeric Maros ◽  
Christiana B. Honsberg ◽  
William Alan Doolittle
Keyword(s):  
Solar Cells ◽  
Small Area ◽  
Large Area ◽  
Heterojunction Solar Cells ◽  
Double Heterojunction

Solution-processed crystalline silicon double-heterojunction solar cells

2016 ◽  
Vol 9 (2) ◽  
pp. 022301 ◽  
Author(s):  
Ramesh Devkota ◽  
Qiming Liu ◽  
Tatsuya Ohki ◽  
Jaker Hossain ◽  
Keiji Ueno ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Solution Processed ◽  
Heterojunction Solar Cells ◽  
Double Heterojunction

Enhanced Open Circuit Voltage in Aluminum Confined Post-Annealing of poly(3-hexylthiophene)/fullerene Bulk Heterojunction Solar Cells under Electric Field

2012 ◽  
Vol 1390 ◽  
Author(s):  
Mukesh Kumar ◽  
Pavel Dutta ◽  
Venkat Bommisetty
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
External Electric Field ◽  
Reverse Bias ◽  
Bulk Heterojunction ◽  
Interface Composition ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells ◽  
Photocurrent Spectroscopy ◽  
Post Annealing

ABSTRACTThe effect of an external electric field during post-annealing on the device characteristics of poly(3-hexylthiophene) (P3HT) and phenyl-C61butyric acid methyl ester (PCBM) bulk heterojunction solar cells was studied. The application of external electric field in forward bias resulted in significant enhancement in Voc and fill factor whereas devices annealed under reverse bias had an enhanced Jsc. Both forward and reverse bias annealing increased the shunt resistance. The Al - blend interface topography and carrier dynamics were studied using conducting atomic force microscopy and frequency dependent intensity modulated photocurrent spectroscopy (IMPS). The results indicate that post-annealing under external electric field can be used to engineer the interface composition to enhance the charge transport in bulk heterojunction solar cells to improve the device performance.

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