Study of a GaN-Based Light-Emitting Diode With a Ga₂O₃ Current Blocking Layer and a Ga₂O₃ Surface Passivation Layer

2021 ◽  
Vol 68 (8) ◽  
pp. 3894-3900
Author(s):  
Ching-Chuan Hsu ◽  
Yan-Ren Hou ◽  
Jing-Shiuan Niu ◽  
Wen-Chau Liu
Keyword(s):  
Surface Passivation ◽  
Light Emitting Diode ◽  
Passivation Layer ◽  
Blocking Layer ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

Current blocking layer in GaN light-emitting diode

2001 ◽  
Author(s):  
Chul Huh ◽  
Ji-Myon Lee ◽  
Dong-Joon Kim ◽  
Seong-Ju Park
Keyword(s):  
Light Emitting Diode ◽  
Blocking Layer ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

Electrical and Optical Characteristics of Different GaN-based Light Emitting Diodes with Current Blocking Layer

2013 ◽  
Vol 34 (7) ◽  
pp. 918-923 ◽  
Author(s):  
郭伟玲 GUO Wei-ling ◽  
俞鑫 YU Xin ◽  
刘建朋 LIU Jian-peng ◽  
樊星 FAN Xing ◽  
白俊雪 Bai Jun-xue
Keyword(s):  
Light Emitting Diodes ◽  
Optical Characteristics ◽  
Blocking Layer ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

Improved Light Extraction of GaN-Based Light-Emitting Diodes by an Ion-Damaged Current Blocking Layer

2012 ◽  
Vol 51 ◽  
pp. 082102 ◽  
Author(s):  
Keon Hwa Lee ◽  
Ki Man Kang ◽  
Gi Cheol Hong ◽  
Seung Hwan Kim ◽  
Woo Young Sun ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Extraction ◽  
Blocking Layer ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes

2000 ◽  
Author(s):  
Guohong Wang ◽  
Xiaoyu Ma ◽  
Yufang Zhang ◽  
Shutang Wang ◽  
Yuzhang Li ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Blocking Layer ◽  
High Brightness ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

scholarly journals InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer

2013 ◽  
Vol 469 (2151) ◽  
pp. 20120652 ◽  
Author(s):  
Liancheng Wang ◽  
Yiyun Zhang ◽  
Xiao Li ◽  
Zhiqiang Liu ◽  
Lian Zhang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Optical Power ◽  
Blocking Layer ◽  
Current Crowding ◽  
Transparent Conductor ◽  
Acid Modification ◽  
Spreading Effect ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

Vertical light-emitting diodes (VLEDs) with a highly reflective membrane (HRM) as current blocking layer (CBL) and a graphene transparent conductive layer (TCL) have been fabricated and characterized. High reflectance of HRM and high transmittance of graphene ensure less loss of the optical power. The VLEDs show improved optical output and less efficiency droop, thanks to the current spreading effect of HRM CBL and graphene TCL by preventing current crowding under the top electrode and thus increasing the internal and external quantum efficiency. With further acid modification, forward electrical characteristics of VLEDs are improved.

Sign in / Sign up

Export Citation Format

Share Document