scholarly journals Measurement and Characterization of Entropy and Degree of Polarization of Weather Radar Targets

2008 ◽  
Vol 46 (10) ◽  
pp. 3196-3207 ◽  
Author(s):  
Michele Galletti ◽  
David H. O. Bebbington ◽  
Madhu Chandra ◽  
Thomas Borner
1979 ◽  
Vol 67 (7) ◽  
pp. 991-1000 ◽  
Author(s):  
L.C. Chan ◽  
D.L. Moffatt ◽  
L. Peters
Keyword(s):  

2000 ◽  
Author(s):  
Dmitri Moisseev ◽  
Christine M. H. Unal ◽  
Herman W. J. Russchenberg ◽  
Leo P. Ligthart
Keyword(s):  

1992 ◽  
Vol 70 (10-11) ◽  
pp. 803-812 ◽  
Author(s):  
Paul D. Colbourne ◽  
Daniel T. Cassidy

Polarization-resolved photoluminescence is a technique that is capable of accurately measuring mechanical stress in luminescent III–V semiconductors. In this paper, the use of polarization-resolved photoluminescence for the detection and characterization of dislocations from the observed patterns of surface stresses is discussed. Formulae are presented for the calculation of the surface stresses owing to several types of threading and misfit dislocations, and calculated distributions of the expected degree of polarization are illustrated. Examples are given of measured distributions of the degree of polarization, showing excellent agreement with the calculated distributions.


2022 ◽  
Vol 2149 (1) ◽  
pp. 012009
Author(s):  
T Saito ◽  
T Sutani ◽  
K Kiyono ◽  
T Oikawa

Abstract Stokes parameters have been measured by using a polarimeter consisting of a rotating phase plate before a fixed polarizer for bullet-shaped red, green and blue LEDs at 3 different directions of 0°, 45° and 90° from the principal axis. The degree of polarization is minimum at the observation angle 0° (observed head-on) for all colors as expected but has non-zero values (1-9%). As for the possible cause for the partial polarization, it is likely to be brought by striae inside the transparent epoxy resin that can be easily visible. Data at observation angle 90° have features common for all colors; the degree of polarization is highest, the long axis azimuth of the polarization ellipse is nearly in the horizontal direction, and the ellipticity is small. These features can be explained as follows. At observation angle 90°, only small fraction of the beam emitted nearly horizontally is detected possibly through multireflection (the plane of incidence is in the vertical plane) inside the top- and bottom-surfaces (in the horizontal direction) of the chip substrate. Since the reflectance for s-polarization (horizontal component) is higher than that for p-polarization, the emerging beam becomes horizontally polarized. The hypotheses that geometrical asymmetry generates polarization is experimentally supported.


MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3373-3378
Author(s):  
Marc Fouchier ◽  
Maria Fahed ◽  
Erwine Pargon ◽  
Névine Rochat ◽  
Jean-Pierre Landesman ◽  
...  

ABSTRACTThe effect of damage induced by plasma etching on the cathodoluminescence intensity of micron-size InP features is studied. At the etched bottom, it is found that the hard mask stripping process is sufficient to recover the luminescence. Within features, the presence of sidewalls reduces luminescence intensity due to additional non-radiative surface recombinations. For a n-doped sample, a carrier diffusion length of 0.84 μm and a reduced nonradiative surface recombination velocity of 2.58 are calculated. Hydrostatic strain within the etched features is measured using the peak shift of the luminescence signal, while in plane strain anisotropy is obtained from its degree of polarization, both with a resolution of about 100 nm.


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