Dislocation detection using polarization-resolved photoluminescence

1992 ◽  
Vol 70 (10-11) ◽  
pp. 803-812 ◽  
Author(s):  
Paul D. Colbourne ◽  
Daniel T. Cassidy
Keyword(s):  
Mechanical Stress ◽  
Excellent Agreement ◽  
Degree Of Polarization ◽  
Misfit Dislocations ◽  
Surface Stresses

Polarization-resolved photoluminescence is a technique that is capable of accurately measuring mechanical stress in luminescent III–V semiconductors. In this paper, the use of polarization-resolved photoluminescence for the detection and characterization of dislocations from the observed patterns of surface stresses is discussed. Formulae are presented for the calculation of the surface stresses owing to several types of threading and misfit dislocations, and calculated distributions of the expected degree of polarization are illustrated. Examples are given of measured distributions of the degree of polarization, showing excellent agreement with the calculated distributions.

scholarly journals Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction

2015 ◽  
Vol 48 (3) ◽  
pp. 655-665 ◽  
Author(s):  
Andrei Benediktovitch ◽  
Alexei Zhylik ◽  
Tatjana Ulyanenkova ◽  
Maksym Myronov ◽  
Alex Ulyanenkov
Keyword(s):  
Dislocation Line ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Silicon And Germanium

Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silicon and germanium, the growth of such systems is challenged by nucleation and propagation of threading and misfit dislocations that degrade the electrical properties. To analyze the dislocation microstructure of Ge films on Si(011) and Si(111), a set of reciprocal space maps and profiles measured in noncoplanar geometry was collected. To process the data, the approach proposed by Kaganer, Köhler, Schmidbauer, Opitz & Jenichen [Phys. Rev. B, (1997),55, 1793–1810] has been generalized to an arbitrary surface orientation, arbitrary dislocation line direction and noncoplanar measurement scheme.

Characterization of Structural Defects in Germanium Epitaxially Grown on Nano-Structured Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 43-49 ◽  
Author(s):  
Peter Zaumseil ◽  
Yuji Yamamoto ◽  
Joachim Bauer ◽  
Markus Andreas Schubert ◽  
Jana Matejova ◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Growth Conditions ◽  
Structural Defects ◽  
Misfit Dislocations ◽  
Strain Partitioning ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
Periodic Arrays ◽  
Transmission Electron

Selective epitaxial growth of germanium (Ge) on nano-structured Si(001) wafers is studied to evaluate the applicability of the nano-heteroepitaxy (NHE) approach on Ge-Si system. Based on a gate spacer technology established in advanced silicon microelectronics periodic arrays of nano-scaled Si islands are prepared, where Ge is deposited on top by reduced pressure CVD. The spacing of these structures is 360 nm. The structural perfection of the deposited Ge is investigated by transmission electron microscopy and X-ray diffraction. It is found that SiO2used as masking material is responsible for the suppression of the desired strain partitioning effect according to NHE. Even for 10 nm oxide thickness, the lattice of Ge layers deposited on Si nano-islands relaxes completely by generation of misfit dislocations at the interface. The occurrence of additional structural defects like stacking faults and micro twins can be controlled by suited growth conditions.

Investigation of Semiconductor Heterostructures by White Beam Synchrotron X-Ray Topography in Grazing Bragg-Laue and Conventional Bragg Geometries

1991 ◽  
Vol 35 (A) ◽  
pp. 247-253
Author(s):  
G.-D. Yao ◽  
J. Wu ◽  
T. Fanning ◽  
M. Dudley
Keyword(s):  
Penetration Depth ◽  
Grazing Incidence ◽  
Semiconductor Heterostructures ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
X Ray ◽  
Main Reflection ◽  
White Beam ◽  
Topographic Imaging

AbstractWhite beam synchrotron X-ray topography has been applied both to the characterization of two semiconductor heterostructures, GaAs/Si and InxGa1-xAs/GaAs strained layers, and a substrate to be used for growing semiconductor epilayers, Cd1-xZnxTe. In the case of the heterostructures, misfit dislocations were observed using depth sensitive X-ray topographic imaging in grazing incidence Bragg-Laue geometries. The X-ray penetration depth, which can be varied from several hundreds of angstroms to hundreds of micrometers by rotating about the main reflection vector, which in this specific case was (355), is governed by kinernatical theory. This is justified by comparing dislocation contrast and visibility with the extent of the calculated effective misorientalion field in comparison to the effective X-ray penetration depth. For the case of Cd1-xZnxTe, twin configurations are observed, and their analysis is presented.

Mbe Growth and Characterization of Hgcdte Heterostructures

1990 ◽  
Vol 198 ◽  
Author(s):  
R.J. Koestner ◽  
M.W. Goodwin ◽  
H.F. Schaake
Keyword(s):  
High Performance ◽  
Misfit Dislocations ◽  
Mbe Growth ◽  
Long Wavelength ◽  
Fine Control ◽  
Critical Materials ◽  
Long Wavelength Infrared ◽  
Growth Technology ◽  
Very High

ABSTRACTHgCdTe heterostructures consisting of a thin n-type widegap (250 meV or 5 μm cutoff) layer deposited on an n-type narrowgap (100-125 meV or 10-13 μm cutoff) layer offer the promise of very high performance metal-insulator-semiconductor (MIS) photocapacitors for long wavelength infrared (LWIR) detection. Molecular Beam Epitaxy (MBE) is a candidate growth technology for these two layer films due to its fine control in composition, thickness and doping concentration. The critical materials issues are reducing the defect content associated with twins in the grown layers, achieving low net donor concentrations in the widegap layer, and avoiding the formation of misfit dislocations at the HgCdTe heterointerface. This paper will report on our recent progress in these directions.

Sign in / Sign up

Export Citation Format

Share Document