Critical Role of W Insertion Layer Sputtering Condition for Reference Layer on Magnetic and Transport Properties of Perpendicular-Anisotropy Magnetic Tunnel Junction

2019 ◽  
pp. 1-4 ◽  
Author(s):  
H. Honjo ◽  
S. Ikeda ◽  
H. Sato ◽  
M. Yasuhira ◽  
T. Endoh
Keyword(s):  
Transport Properties ◽  
Tunnel Junction ◽  
Critical Role ◽  
Magnetic Tunnel Junction ◽  
Perpendicular Anisotropy ◽  
Reference Layer

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

2010 ◽  
Vol 9 (9) ◽  
pp. 721-724 ◽  
Author(s):  
S. Ikeda ◽  
K. Miura ◽  
H. Yamamoto ◽  
K. Mizunuma ◽  
H. D. Gan ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Perpendicular Anisotropy

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

Effect of annealing on the magnetic tunnel junction with Co/Pt perpendicular anisotropy ferromagnetic multilayers

2010 ◽  
Vol 107 (9) ◽  
pp. 09C711 ◽  
Author(s):  
Yi. Wang ◽  
W. X. Wang ◽  
H. X. Wei ◽  
B. S. Zhang ◽  
W. S. Zhan ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Perpendicular Anisotropy

Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque

2015 ◽  
Vol 48 (6) ◽  
pp. 065001 ◽  
Author(s):  
Zhaohao Wang ◽  
Weisheng Zhao ◽  
Erya Deng ◽  
Jacques-Olivier Klein ◽  
Claude Chappert
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Perpendicular Anisotropy

Inverse magnetoresistance in magnetic tunnel junction with a plasma-oxidized Fe electrode and the effect of annealing on its transport properties

2005 ◽  
Vol 97 (10) ◽  
pp. 10C907 ◽  
Author(s):  
Chando Park ◽  
Jian-Gang Zhu ◽  
Yingguo Peng ◽  
David E. Laughlin ◽  
Robert M. White
Keyword(s):  
Transport Properties ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction
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