A High-Power Broadband Passive Terahertz Frequency Doubler in CMOS

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2013.2243465 ◽

2013 ◽

Vol 61 (3) ◽

pp. 1150-1160 ◽

Author(s):

Ruonan Han ◽

Ehsan Afshari

Keyword(s):

Frequency Doubler ◽

Terahertz Frequency

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A high-power millimeter-wave frequency doubler using a planar diode array

IEEE Microwave and Guided Wave Letters ◽

10.1109/75.219810 ◽

1993 ◽

Vol 3 (6) ◽

pp. 188-190 ◽

Author(s):

B.J. Rizzi ◽

T.W. Crowe ◽

N.R. Erickson

Keyword(s):

Millimeter Wave ◽

Wave Frequency ◽

Diode Array ◽

Frequency Doubler ◽

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Stable, high-power, single-frequency generation at 532 nm from a diode-bar-pumped Nd:YAG ring laser with an intracavity LBO frequency doubler

Applied Optics ◽

10.1364/ao.36.004149 ◽

1997 ◽

Vol 36 (18) ◽

pp. 4149 ◽

Author(s):

Kevin I. Martin ◽

W. Andrew Clarkson ◽

David C. Hanna

Keyword(s):

Single Frequency ◽

Frequency Doubler ◽

Frequency Generation ◽

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A high-power, broadband 245-285 GHz balanced frequency doubler in 45 nm SOI CMOS

Microwave and Optical Technology Letters ◽

10.1002/mop.29586 ◽

2015 ◽

Vol 58 (2) ◽

pp. 423-426

Author(s):

Morteza Abbasi ◽

David S. Ricketts

Keyword(s):

Frequency Doubler ◽

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WR-1.5 High-Power Frequency Doubler in 130-nm InP HBT Technology

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2020.2980672 ◽

2020 ◽

Vol 30 (5) ◽

pp. 504-507

Author(s):

Iljin Lee ◽

Sanggeun Jeon

Keyword(s):

Frequency Doubler ◽

Power Frequency

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A Compact Highly Efficient High-Power Ka-band SiGe HBT Cascode Frequency Doubler With Four-Way Input Transformer Balun

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2018.2811494 ◽

2018 ◽

Vol 66 (6) ◽

pp. 2879-2887 ◽

Author(s):

Inchan Ju ◽

Clifford DY Cheon ◽

John D. Cressler

Keyword(s):

Frequency Doubler ◽

Ka Band ◽

Sige Hbt ◽

Highly Efficient ◽

Input Transformer

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A High Gain, High Power K-Band Frequency Doubler in 0.18 $\mu{\rm m}$ CMOS Process

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2010.2057412 ◽

2010 ◽

Vol 20 (9) ◽

pp. 522-524 ◽

Author(s):

Jung-Hau Chen ◽

Huei Wang

Keyword(s):

High Gain ◽

Cmos Process ◽

Frequency Doubler ◽

Band Frequency ◽

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190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

IEICE Electronics Express ◽

10.1587/elex.13.20160981 ◽

2016 ◽

Vol 13 (22) ◽

pp. 20160981-20160981 ◽

Author(s):

Zhe Chen ◽

Hui Wang ◽

Byron Alderman ◽

Peter Huggard ◽

Bo Zhang ◽

...

Keyword(s):

Schottky Diodes ◽

Power Input ◽

Input Frequency ◽

Frequency Doubler

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Tunable, high-power ferrite frequency doubler

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1967.15968 ◽

1967 ◽

Vol 14 (7) ◽

pp. 395-400 ◽

Author(s):

M. Weiner

Keyword(s):

Frequency Doubler

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High Power X-Band Ferrite Frequency Doubler

10.1109/mwsym.1979.1124075 ◽

2005 ◽

Author(s):

L. Dubrowsky ◽

D. Buck ◽

A. Kern ◽

D. Schubert

Keyword(s):

Frequency Doubler ◽

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High-power dual-wavelength external-cavity diode laser based on tapered amplifier with tunable terahertz frequency difference

Optics Letters ◽

10.1364/ol.36.002626 ◽

2011 ◽

Vol 36 (14) ◽

pp. 2626 ◽

Author(s):

Mingjun Chi ◽

Ole Bjarlin Jensen ◽

Paul Michael Petersen

Keyword(s):

Diode Laser ◽

External Cavity ◽

Frequency Difference ◽

Dual Wavelength ◽

External Cavity Diode Laser ◽

Terahertz Frequency

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