Total Ionizing Dose Response of Triple-Well FET-Based Wideband, High-Isolation RF Switches in a 130 nm SiGe BiCMOS Technology

2013 ◽  
Vol 60 (4) ◽  
pp. 2567-2573 ◽  
Author(s):  
Adilson S. Cardoso ◽  
Partha S. Chakraborty ◽  
Nelson E. Lourenco ◽  
Peter Song ◽  
Troy D. England ◽  
...  
Keyword(s):  
Dose Response ◽  
Total Ionizing Dose ◽  
Rf Switches ◽  
High Isolation ◽  
Bicmos Technology ◽  
Sige Bicmos

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

2014 ◽  
Vol 61 (6) ◽  
pp. 3210-3217 ◽  
Author(s):  
Adilson S. Cardoso ◽  
Partha S. Chakraborty ◽  
Nedeljko Karaulac ◽  
David M. Fleischhauer ◽  
Nelson E. Lourenco ◽  
...  
Keyword(s):  
Total Dose ◽  
Dose Response ◽  
Voltage Reference ◽  
Single Event ◽  
Single Event Transient ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Precision Voltage

Wideband high-isolation SPDT RF switch in 0.18- $$\upmu$$ μ m SiGe BiCMOS technology

2016 ◽  
Vol 87 (1) ◽  
pp. 11-19 ◽  
Author(s):  
Byeong Wan Ha ◽  
Chang Won Seo ◽  
Choon Sik Cho ◽  
Young-Jin Kim
Keyword(s):  
Rf Switch ◽  
High Isolation ◽  
Bicmos Technology ◽  
Sige Bicmos

Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures

2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler
Keyword(s):  
Cryogenic Temperatures ◽  
Current Mirrors ◽  
Bicmos Technology ◽  
Sige Bicmos
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