Output Impedance Modeling and High-Frequency Impedance Shaping Method for Distributed Bidirectional DC–DC Converters in DC Microgrids

2020 ◽  
Vol 35 (7) ◽  
pp. 7001-7014 ◽  
Author(s):  
Qi Zhang ◽  
Jiangjiang Li ◽  
Rongwu Zhu ◽  
Fujin Deng ◽  
Xiangdong Sun ◽  
...  
Author(s):  
Gennaro Gelao ◽  
◽  
Roberto Marani ◽  
Anna Gina Perri

In this paper we compare simulation results on a differential pair circuit using a CNTFET model, already proposed by us, with the result obtained using Stanford model. We study the case of differential pair with differential input and single ended output as core of a 50 GHz amplifier for mm waves band. We consider the case of a CNTFET having a single CNT tube with indices (19,0) and 25 nm long. For this circuit we present result for its main parameters: gain, input impedance, output impedance, noise and distortion. Since the Stanford model includes fixed capacitance, for comparison we applied the same capacitance on our model. Since this capacitances dominate the high frequency cut, results are not much different, except for the lack of noise modelling in the Stanford model.


2020 ◽  
Vol 11 (4) ◽  
pp. 2940-2949 ◽  
Author(s):  
Shivam Chaturvedi ◽  
Deepak Fulwani ◽  
Josep M. Guerrero

2011 ◽  
Vol 58 (3) ◽  
pp. 843-852 ◽  
Author(s):  
Deblina Sarkar ◽  
Chuan Xu ◽  
Hong Li ◽  
Kaustav Banerjee

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