Time-domain AC characterization of silicon carbide (SiC) nanoelectromechanical switches toward high-speed operations

2013 ◽  
Author(s):  
Tina He ◽  
Vaishnavi Ranganathan ◽  
Rui Yang ◽  
Srihari Rajgopal ◽  
Swarup Bhunia ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Time Domain ◽  
High Speed

Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal

2008 ◽  
Vol 600-603 ◽  
pp. 855-858 ◽  
Author(s):  
Tomohisa Kato ◽  
Toshiya Noro ◽  
Hideaki Takahashi ◽  
Satarou Yamaguchi ◽  
Kazuo Arai
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electric Discharge ◽  
High Voltage ◽  
High Speed ◽  
Surface Damage ◽  
Lower Surface ◽  
Etch Pits ◽  
Electric Discharge Machining

In this study, we report electric discharge machining (EDM) as a new cutting method for silicon carbide (SiC) single crystals. Moreover, we discuss characteristics and usefulness of the EDM for the SiC. The EDM realized not only high speed and smooth cutting but also lower surface damage. Defect propagation in the EDM SiCs have been also estimated by etch pits observation using molten KOH, however, we confirmed the EDM has caused no damage inside the SiCs in spite of high voltage and high temperature during the machining.

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