A Behavior Model of an On-Chip High Voltage Generator for Fast, System-Level Simulation

2012 ◽  
Vol 20 (12) ◽  
pp. 2351-2355 ◽  
Author(s):  
Toru Tanzawa
2020 ◽  
Vol 29 (1) ◽  
pp. 86-94
Author(s):  
Yuki Okamoto ◽  
Hiroyuki Ryoson ◽  
Koji Fujimoto ◽  
Takayuki Ohba ◽  
Yoshio Mita

Author(s):  
T. Imura ◽  
S. Maruse ◽  
K. Mihama ◽  
M. Iseki ◽  
M. Hibino ◽  
...  

Ultra high voltage STEM has many inherent technical advantages over CTEM. These advantages include better signal detectability and signal processing capability. It is hoped that it will explore some new applications which were previously not possible. Conventional STEM (including CTEM with STEM attachment), however, has been unable to provide these inherent advantages due to insufficient performance and engineering problems. Recently we have developed a new 1250 kV STEM and completed installation at Nagoya University in Japan. It has been designed to break through conventional engineering limitations and bring about theoretical advantage in practical applications.In the design of this instrument, we exercised maximum care in providing a stable electron probe. A high voltage generator and an accelerator are housed in two separate pressure vessels and they are connected with a high voltage resistor cable.(Fig. 1) This design minimized induction generated from the high voltage generator, which is a high frequency Cockcroft-Walton type, being transmitted to the electron probe.


2018 ◽  
Vol 11 (1) ◽  
pp. 39
Author(s):  
Vyacheslav Vavilov ◽  
Flur Ismagilov ◽  
Irek Khayrullin ◽  
Ruslan Dinarovich Karimov

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