A very low column FPN and row temporal noise 8.9 M-pixel, 60 fps CMOS image sensor with 14bit column parallel SA- ADC

2008 IEEE Symposium on VLSI Circuits ◽

10.1109/vlsic.2008.4585983 ◽

2008 ◽

Author(s):

S. Matsuo ◽

T. Bales ◽

M. Shoda ◽

S. Osawa ◽

B. Almond ◽

...

Keyword(s):

Cmos Image Sensor ◽

Image Sensor ◽

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A 2erms − Temporal Noise CMOS Image Sensor With In-Pixel 1/f Noise Reduction and Conversion Gain Modulation for Low Light Imaging

IEEE Transactions on Circuits and Systems I Regular Papers ◽

10.1109/tcsi.2020.3034377 ◽

2021 ◽

Vol 68 (1) ◽

pp. 185-195

Author(s):

Neha Priyadarshini ◽

Mukul Sarkar

Keyword(s):

Noise Reduction ◽

Cmos Image Sensor ◽

Image Sensor ◽

Conversion Gain ◽

Gain Modulation ◽

Low Light ◽

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4.5 A 1.8erms− temporal noise over 110dB dynamic range 3.4µm pixel pitch global shutter CMOS image sensor with dual-gain amplifiers, SS-ADC and multiple-accumulation shutter

2017 IEEE International Solid-State Circuits Conference (ISSCC) ◽

10.1109/isscc.2017.7870267 ◽

2017 ◽

Author(s):

Masahiro Kobayashi ◽

Yusuke Onuki ◽

Kazunari Kawabata ◽

Hiroshi Sekine ◽

Toshiki Tsuboi ◽

...

Keyword(s):

Dynamic Range ◽

Cmos Image Sensor ◽

Image Sensor ◽

Temporal Noise ◽

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A 1.1e- temporal noise 1/3.2-inch 8Mpixel CMOS image sensor using pseudo-multiple sampling

2010 IEEE International Solid-State Circuits Conference - (ISSCC) ◽

10.1109/isscc.2010.5433971 ◽

2010 ◽

Author(s):

Yong Lim ◽

Kyoungmin Koh ◽

Kyungmin Kim ◽

Han Yang ◽

Juha Kim ◽

...

Keyword(s):

Cmos Image Sensor ◽

Image Sensor ◽

Temporal Noise ◽

Multiple Sampling

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5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

2020 IEEE International Solid- State Circuits Conference - (ISSCC) ◽

10.1109/isscc19947.2020.9063092 ◽

2020 ◽

Author(s):

Jae-Kyu Lee ◽

Seung Sik Kim ◽

In-Gyu Baek ◽

Heesung Shim ◽

Taehoon Kim ◽

...

Keyword(s):

High Capacity ◽

Cmos Image Sensor ◽

Light Sensitivity ◽

Image Sensor ◽

Temporal Noise ◽

Backside Illuminated

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A 0.5erms−Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion Gain

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2759787 ◽

2017 ◽

Vol 64 (12) ◽

pp. 5019-5026 ◽

Author(s):

Xiaoliang Ge ◽

Albert J. P. Theuwissen

Keyword(s):

Cmos Image Sensor ◽

Image Sensor ◽

Conversion Gain ◽

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Temporal Noise Analysis and Reduction Method in CMOS Image Sensor Readout Circuit

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2030619 ◽

2009 ◽

Vol 56 (11) ◽

pp. 2489-2495 ◽

Author(s):

Bong Chan Kim ◽

Jongwook Jeon ◽

Hyungcheol Shin

Keyword(s):

Reduction Method ◽

Noise Analysis ◽

Cmos Image Sensor ◽

Image Sensor ◽

Readout Circuit ◽

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A Deep Sub-Electron Temporal Noise CMOS Image Sensor with Adjustable sinc-type Filter to Achieve Photon Counting Capability

IEEE Solid-State Circuits Letters ◽

10.1109/lssc.2021.3089364 ◽

2021 ◽

pp. 1-1

Author(s):

Liqiang Han ◽

Albert J. P. Theuwissen

Keyword(s):

Photon Counting ◽

Cmos Image Sensor ◽

Image Sensor ◽

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An 80μVrms-temporal-noise 82dB-dynamic-range CMOS Image Sensor with a 13-to-19b variable-resolution column-parallel folding-integration/cyclic ADC

2011 IEEE International Solid-State Circuits Conference ◽

10.1109/isscc.2011.5746369 ◽

2011 ◽

Author(s):

Min-Woong Seo ◽

Sungho Suh ◽

Tetsuya Iida ◽

Hiroshi Watanabe ◽

Taishi Takasawa ◽

...

Keyword(s):

Dynamic Range ◽

Cmos Image Sensor ◽

Image Sensor ◽

Variable Resolution ◽

Temporal Noise ◽

Parallel Folding

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A 1.8e− temporal noise over 90dB dynamic range 4k2k super 35mm format seamless global shutter CMOS image sensor with multiple accumulation shutter technology

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838377 ◽

2016 ◽

Author(s):

Kazunari Kawabata ◽

Masahiro Kobayashi ◽

Yusuke Onuki ◽

Hiroshi Sekine ◽

Toshiki Tsuboi ◽

...

Keyword(s):

Dynamic Range ◽

Cmos Image Sensor ◽

Image Sensor ◽

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A 2.7e- temporal noise 99.7% shutter efficiency 92dB dynamic range CMOS image sensor with dual global shutter pixels

2010 IEEE International Solid-State Circuits Conference - (ISSCC) ◽

10.1109/isscc.2010.5433976 ◽

2010 ◽

Author(s):

Keita Yasutomi ◽

Shinya Itoh ◽

Shoji Kawahito

Keyword(s):

Dynamic Range ◽

Cmos Image Sensor ◽

Image Sensor ◽

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