A 1.1e- temporal noise 1/3.2-inch 8Mpixel CMOS image sensor using pseudo-multiple sampling

2010 IEEE International Solid-State Circuits Conference - (ISSCC) ◽

10.1109/isscc.2010.5433971 ◽

2010 ◽

Author(s):

Yong Lim ◽

Kyoungmin Koh ◽

Kyungmin Kim ◽

Han Yang ◽

Juha Kim ◽

...

Keyword(s):

Cmos Image Sensor ◽

Image Sensor ◽

Temporal Noise ◽

Multiple Sampling

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6.7 A 1.2e− temporal noise 3D-stacked CMOS image sensor with comparator-based multiple-sampling PGA

2016 IEEE International Solid-State Circuits Conference (ISSCC) ◽

10.1109/isscc.2016.7417937 ◽

2016 ◽

Author(s):

Kei Shiraishi ◽

Yasuhiro Shinozuka ◽

Tomonori Yamashita ◽

Kazuhide Sugiura ◽

Naoto Watanabe ◽

...

Keyword(s):

Cmos Image Sensor ◽

Image Sensor ◽

Temporal Noise ◽

Multiple Sampling

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A 2erms − Temporal Noise CMOS Image Sensor With In-Pixel 1/f Noise Reduction and Conversion Gain Modulation for Low Light Imaging

IEEE Transactions on Circuits and Systems I Regular Papers ◽

10.1109/tcsi.2020.3034377 ◽

2021 ◽

Vol 68 (1) ◽

pp. 185-195

Author(s):

Neha Priyadarshini ◽

Mukul Sarkar

Keyword(s):

Noise Reduction ◽

Cmos Image Sensor ◽

Image Sensor ◽

Conversion Gain ◽

Gain Modulation ◽

Low Light ◽

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A 1/3" VGA linear wide dynamic range CMOS image sensor implementing a predictive multiple sampling algorithm with overlapping integration intervals

Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003. ◽

10.1109/cicc.2003.1249446 ◽

2004 ◽

Author(s):

P.M. Acosta-Serafini ◽

I. Masaki ◽

C.G. Sodini

Keyword(s):

Dynamic Range ◽

Cmos Image Sensor ◽

Image Sensor ◽

Wide Dynamic Range ◽

Sampling Algorithm ◽

Multiple Sampling

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Noise Analysis of a Serial Multiple Sampling in Back-Illuminated CMOS Image Sensor

10.7567/ssdm.2016.ps-2-5-16 ◽

2016 ◽

Author(s):

H. Wakabayashi ◽

K. Yamaguchi ◽

Y. Yamagata

Keyword(s):

Noise Analysis ◽

Cmos Image Sensor ◽

Image Sensor ◽

Multiple Sampling ◽

Back Illuminated

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4.5 A 1.8erms− temporal noise over 110dB dynamic range 3.4µm pixel pitch global shutter CMOS image sensor with dual-gain amplifiers, SS-ADC and multiple-accumulation shutter

2017 IEEE International Solid-State Circuits Conference (ISSCC) ◽

10.1109/isscc.2017.7870267 ◽

2017 ◽

Author(s):

Masahiro Kobayashi ◽

Yusuke Onuki ◽

Kazunari Kawabata ◽

Hiroshi Sekine ◽

Toshiki Tsuboi ◽

...

Keyword(s):

Dynamic Range ◽

Cmos Image Sensor ◽

Image Sensor ◽

Temporal Noise ◽

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A Wide Dynamic Range CMOS Image Sensor with Gated Charge Storage and a Multiple Sampling Technique

2006 5th IEEE Conference on Sensors ◽

10.1109/icsens.2007.355491 ◽

2006 ◽

Author(s):

Suhaidi Shafie ◽

S. Kawahito

Keyword(s):

Dynamic Range ◽

Sampling Technique ◽

Cmos Image Sensor ◽

Image Sensor ◽

Charge Storage ◽

Wide Dynamic Range ◽

Multiple Sampling

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5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

2020 IEEE International Solid- State Circuits Conference - (ISSCC) ◽

10.1109/isscc19947.2020.9063092 ◽

2020 ◽

Author(s):

Jae-Kyu Lee ◽

Seung Sik Kim ◽

In-Gyu Baek ◽

Heesung Shim ◽

Taehoon Kim ◽

...

Keyword(s):

High Capacity ◽

Cmos Image Sensor ◽

Light Sensitivity ◽

Image Sensor ◽

Temporal Noise ◽

Backside Illuminated

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A 0.5erms−Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion Gain

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2759787 ◽

2017 ◽

Vol 64 (12) ◽

pp. 5019-5026 ◽

Author(s):

Xiaoliang Ge ◽

Albert J. P. Theuwissen

Keyword(s):

Cmos Image Sensor ◽

Image Sensor ◽

Conversion Gain ◽

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A 0.66erms− Temporal-Readout-Noise 3-D-Stacked CMOS Image Sensor With Conditional Correlated Multiple Sampling Technique

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2017.2765927 ◽

2018 ◽

Vol 53 (2) ◽

pp. 527-537 ◽

Author(s):

Shang-Fu Yeh ◽

Kuo-Yu Chou ◽

Hon-Yih Tu ◽

Calvin Yi-Ping Chao ◽

Fu-Lung Hsueh

Keyword(s):

Sampling Technique ◽

Cmos Image Sensor ◽

Image Sensor ◽

Multiple Sampling ◽

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Temporal Noise Analysis and Reduction Method in CMOS Image Sensor Readout Circuit

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2030619 ◽

2009 ◽

Vol 56 (11) ◽

pp. 2489-2495 ◽

Author(s):

Bong Chan Kim ◽

Jongwook Jeon ◽

Hyungcheol Shin

Keyword(s):

Reduction Method ◽

Noise Analysis ◽

Cmos Image Sensor ◽

Image Sensor ◽

Readout Circuit ◽

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