Excellent Static and Dynamic Scaling of Power Handling Capability of the BaSIC(DMM) Topology with 1.2 kV SiC Power MOSFETs

2021 ◽  
Author(s):  
Ajit Kanale ◽  
B. Jayant Baliga
Keyword(s):  
Dynamic Scaling ◽  
Power Mosfets ◽  
Power Handling ◽  
Power Handling Capability

Gradient honeycomb absorber with high power handling capability

2021 ◽  
Vol 127 (2) ◽  
Author(s):  
L. Liu ◽  
Y. Zhang ◽  
J. Q. Sheng ◽  
Y. M. Wei ◽  
R. M. Liu ◽  
...  
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability

HTS narrowband stripline filter at 2.1 GHz with high power handling capability

2006 ◽  
Vol 49 (2) ◽  
pp. 254-257 ◽  
Author(s):  
Xubo Guo ◽  
Xiaoping Zhang ◽  
Bisong Cao ◽  
Bin Wei ◽  
Lijuan Mu ◽  
...  
Keyword(s):  
High Power ◽  
Power Handling ◽  
Power Handling Capability

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

1991 ◽  
Vol 240 ◽  
Author(s):  
J. H. Zhao ◽  
R. Lis ◽  
D. Coblentz ◽  
J. Illan ◽  
S. McAfee ◽  
...  
Keyword(s):  
High Power ◽  
High Concentration ◽  
Photoconductive Switch ◽  
Turn On ◽  
Power Handling ◽  
Switched Current ◽  
Power Handling Capability ◽  
Pn Junctions ◽  
Switching Characteristics ◽  
Switch Voltage

ABSTRACTAn MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.

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