Effect of the Silicon Nitride Coating of Quartz Crucible on Impurity Distribution in Ingot-Cast Multicrystalline Silicon

2012 ◽  
Vol 10 (1) ◽  
pp. 40-44 ◽  
Author(s):  
Jiayan Li ◽  
Mei Liu ◽  
Yi Tan ◽  
Lishi Wen
2006 ◽  
Vol 287 (2) ◽  
pp. 402-407 ◽  
Author(s):  
T. Buonassisi ◽  
A.A. Istratov ◽  
M.D. Pickett ◽  
J.-P. Rakotoniaina ◽  
O. Breitenstein ◽  
...  

2003 ◽  
Vol 11 (2) ◽  
pp. 125-130 ◽  
Author(s):  
J. Hong ◽  
W. M. M. Kessels ◽  
F. J. H. van Assche ◽  
H. C. Rieffe ◽  
W. J. Soppe ◽  
...  

2008 ◽  
Vol 310 (22) ◽  
pp. 4666-4671 ◽  
Author(s):  
Hitoshi Matsuo ◽  
R. Bairava Ganesh ◽  
Satoshi Nakano ◽  
Lijun Liu ◽  
Yoshihiro Kangawa ◽  
...  

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Yuang-Tung Cheng ◽  
Jyh-Jier Ho ◽  
William J. Lee ◽  
Song-Yeu Tsai ◽  
Yung-An Lu ◽  
...  

The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of125×125 mm2were acid etched to produce simultaneouslyPOCl3emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4) coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (Voc) is 616 mV, short circuit current (Jsc) is 34.1 mA/cm2, and minority carrier diffusion length is 474.16 μm. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.


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