bulk passivation
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2021 ◽  
pp. 2002078
Author(s):  
Jintao Wang ◽  
Guangyong Jin ◽  
Qingzhu Zhen ◽  
Chenyang He ◽  
Yu Duan


2021 ◽  
Vol 13 (8) ◽  
pp. 10110-10119
Author(s):  
Shangzheng Pang ◽  
Chunfu Zhang ◽  
Hang Dong ◽  
Zeyang Zhang ◽  
Dazheng Chen ◽  
...  


RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52947-52954 ◽  
Author(s):  
Keke Qiao ◽  
Yulin Cao ◽  
Xiaokun Yang ◽  
Jahangeer Khan ◽  
Hui Deng ◽  
...  

A simple passivation method based on PbI2 was developed, which can effectively suppress the heterojunction interface and PbS QD surface defects by interface and ligand passivation.



Author(s):  
Arunodoy Saha ◽  
Haifeng Zhang ◽  
Wen-Cheng Sun ◽  
Meng Tao
Keyword(s):  


2010 ◽  
Vol 10 (2) ◽  
pp. S215-S217 ◽  
Author(s):  
Suttirat Rattanapan ◽  
Hiroshi Yamamoto ◽  
Shinsuke Miyajima ◽  
Takehiko Sato ◽  
Makoto Konagai


2009 ◽  
Vol 404 (23-24) ◽  
pp. 4995-4998 ◽  
Author(s):  
L.B. Karlina ◽  
A.S. Vlasov ◽  
E.P. Rakova ◽  
B.Y. Ber ◽  
D.Yu. Kazanthev ◽  
...  


2009 ◽  
Vol 156-158 ◽  
pp. 357-362 ◽  
Author(s):  
Emanuele Cornagliotti ◽  
Harold F.W. Dekkers ◽  
Caterina Prastani ◽  
Joachim John ◽  
Emmanuel Van Kerschaver ◽  
...  

In this work the impact of hydrogenation from hydrogen-rich amorphous silicon nitride (a-SiNx:H) on dislocations and grain boundaries in multi-crystalline silicon (mc-Si) solar cells is presented. Layers are deposited by means of plasma enhanced chemical vapor deposition (PECVD). Electrical bulk passivation is provided during thermal annealing, in which hydrogen diffuses from a-SiNx:H. The passivation effect is discussed in terms of recombination centers and non-recombinative charge traps reduction as well as in terms of local short circuit current improvement in specially manufactured solar cells.



2009 ◽  
Vol 93 (8) ◽  
pp. 1281-1289 ◽  
Author(s):  
J.-F. Lelièvre ◽  
E. Fourmond ◽  
A. Kaminski ◽  
O. Palais ◽  
D. Ballutaud ◽  
...  


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