scholarly journals 3D printing of high‐purity silicon carbide

2019 ◽  
Vol 103 (3) ◽  
pp. 1575-1581 ◽  
Author(s):  
Kurt Terrani ◽  
Brian Jolly ◽  
Michael Trammell
1988 ◽  
Vol 121 ◽  
Author(s):  
Eloise A. Pugar ◽  
Peter E.D. Morgan

ABSTRACTDirect processes that may be used to manufacture high purity silicon nitride or silicon carbide are described. Elemental silicon has been found to react directly with liquid ammonia and amines at low temperature to yield compounds for both the ceramic and chemical industries. Silicon-amine direct reactions, previously thought not to occur, were investigated by using 29Si NMR, IR, UV, Raman, XRD, ICP, EDS and TGA methods to detect and characterize product formation. The [Si,N,H] and [Si,C,N,H] products transform to silicon nitride or silicon carbide respectively when heated above 1300°C.


1996 ◽  
Vol 79 (11) ◽  
pp. 2897-2911 ◽  
Author(s):  
C. Eric Ramberg ◽  
Gary Cruciani ◽  
Karl E. Spear ◽  
Richard E. Tressler ◽  
Charles F. Ramberg

1960 ◽  
Vol 32 (8) ◽  
pp. 933-935 ◽  
Author(s):  
G. H. Morrison ◽  
R. L. Rupp ◽  
G. L. Klecak

Author(s):  
Z.-F. Zhang ◽  
Y. Mu ◽  
F. Babonneau ◽  
R. M. Laine ◽  
J. F. Harrod ◽  
...  

1991 ◽  
pp. 169-183
Author(s):  
Yoichi Ishida ◽  
Hideki Ichinose ◽  
Yoshizo Inomata

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