Passive-Oxidation Kinetics of High-Purity Silicon Carbide from 800o to 1100oC

1996 ◽  
Vol 79 (11) ◽  
pp. 2897-2911 ◽  
Author(s):  
C. Eric Ramberg ◽  
Gary Cruciani ◽  
Karl E. Spear ◽  
Richard E. Tressler ◽  
Charles F. Ramberg
Keyword(s):  
Silicon Carbide ◽  
High Purity ◽  
Oxidation Kinetics ◽  
Passive Oxidation ◽  
High Purity Silicon ◽  
Kinetics Of

scholarly journals Oxidation kinetics of hot-pressed silicon carbide

1976 ◽  
Vol 11 (11) ◽  
pp. 2175-2175
Author(s):  
S. C. Singhal
Keyword(s):  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Kinetics Of

Intrinsic nitridation kinetics of high-purity silicon powder

AIChE Journal ◽  
1996 ◽  
Vol 42 (12) ◽  
pp. 3477-3483 ◽  
Author(s):  
Mostafa Maalmi ◽  
Arvind Varma
Keyword(s):  
High Purity ◽  
Silicon Powder ◽  
High Purity Silicon ◽  
Kinetics Of

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

Evaluation of Trace Impurities in the Preparation of High-Purity Silicon Carbide

1966 ◽  
Vol 113 (11) ◽  
pp. 1215 ◽  
Author(s):  
D. L. Barrett
Keyword(s):  
Silicon Carbide ◽  
High Purity ◽  
Trace Impurities ◽  
High Purity Silicon

scholarly journals 3D printing of high‐purity silicon carbide

2019 ◽  
Vol 103 (3) ◽  
pp. 1575-1581 ◽  
Author(s):  
Kurt Terrani ◽  
Brian Jolly ◽  
Michael Trammell
Keyword(s):  
Silicon Carbide ◽  
3D Printing ◽  
High Purity ◽  
High Purity Silicon

Oxidation Kinetics of Silicon Carbide Crystals and Ceramics: I, In Dry Oxygen

1986 ◽  
Vol 69 (9) ◽  
pp. 674-681 ◽  
Author(s):  
JOHN A. COSTELLO ◽  
RICHARD E. TRESSLER
Keyword(s):  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Kinetics Of

Low Temperature Direct Reactions Between Elemental Silicon and Liquid Ammonia or Amines for Ceramics and Chemical Intermediates

1988 ◽  
Vol 121 ◽  
Author(s):  
Eloise A. Pugar ◽  
Peter E.D. Morgan
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Low Temperature ◽  
High Purity ◽  
Liquid Ammonia ◽  
Product Formation ◽  
Elemental Silicon ◽  
High Purity Silicon ◽  
Direct Reactions ◽  
Uv Raman

ABSTRACTDirect processes that may be used to manufacture high purity silicon nitride or silicon carbide are described. Elemental silicon has been found to react directly with liquid ammonia and amines at low temperature to yield compounds for both the ceramic and chemical industries. Silicon-amine direct reactions, previously thought not to occur, were investigated by using 29Si NMR, IR, UV, Raman, XRD, ICP, EDS and TGA methods to detect and characterize product formation. The [Si,N,H] and [Si,C,N,H] products transform to silicon nitride or silicon carbide respectively when heated above 1300°C.

Oxidation kinetics of silicon carbide in steam at temperature range of 1400 to 1800 °C studied by laser heating

2020 ◽  
Vol 529 ◽  
pp. 151939 ◽  
Author(s):  
Hai Vu Pham ◽  
Yuji Nagae ◽  
Masaki Kurata ◽  
David Bottomley ◽  
Kenichiro Furumoto
Keyword(s):  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Laser Heating ◽  
Temperature Range ◽  
Kinetics Of
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