Thermal-CVD System Designed for Growth of Carbon Nanotubes

2006 ◽  
Author(s):  
Samuele Porro ◽  
Simone Musso ◽  
Massimo Rovere ◽  
Mauro Giorcelli ◽  
Angelica Chiodoni ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
Metal Catalyst ◽  
Silicon Substrates ◽  
Carbon Structures ◽  
High Temperature Furnace ◽  
Aligned Carbon Nanotubes ◽  
Growth System ◽  
Vertically Aligned

We report a study on a thermal chemical vapor deposition (CVD) system optimized for the growth of well packed and vertically aligned carbon nanotubes (CNTs) on uncoated silicon substrates. The process of synthesis involves the co-evaporation of a carbon precursor and a metal catalyst in a nitrogen atmosphere inside a high temperature furnace. Beside the formation of CNTs, depending in particular on the deposition temperature, other carbon structures can be deposited, such as nanographite. We show the growth results analyzed by different characterization techniques (electron microscopy, porosity and thermal stability investigations, micro-Raman spectroscopy). In addition, we report an investigation on the development of secondary transversal vortex flows caused by the effects of distribution of temperatures inside the growth system, in order to correlate them with the growth results.

Anomalous Branch-structured Carbon Nanotubes on Silicon Substrates

2007 ◽  
Vol 1057 ◽  
Author(s):  
Yaser Abdi ◽  
Shams Mohajerzadeh ◽  
Kokab Baghbani ◽  
Sara Paydavosi ◽  
Ebrahim Asl Soleimani
Keyword(s):  
Carbon Nanotubes ◽  
Seed Layer ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Silicon Substrates ◽  
Vertically Aligned Carbon Nanotubes ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned ◽  
Anomalous Branch

ABSTRACTWe have grown vertically-aligned carbon nanotubes on (100) silicon substrates by means of a plasma enhanced chemical vapor deposition method. The growth of CNTs is achieved by a mixture of hydrogen and acetylene gases in a CVD reactor and a 2-5nm thick nickel is used as the seed for the growth. Following the growth of nanotubes on the silicon substrates, they are covered by a titanium-oxide layer and then the substrate is placed back into the original chamber to expose to a hydrogen plasma. Depending on the hydrogenation step, the nickel seed layer, which is placed on the tip side of the original nanotube, is expanded. The subsequent process in the same reactor leads to the growth of carbon nanotubes in a branched manner. Scanning electron microscopy has been used to investigate the results of such tree-like nanostructures.

Fabrication of Carbon Nanotube Triode Using Helicon Plasma Cvd with Electroplated Nico Catalyst

2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Metal Catalyst ◽  
Ni Catalyst ◽  
Plasma Cvd ◽  
Helicon Plasma ◽  
Plasma Enhanced Cvd ◽  
Turn On ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.

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