Thermal Characterization of Silicon Nanowires

Author(s):  
Wenjun Liu ◽  
Yizhang Yang ◽  
Mehdi Asheghi

When crystalline solids are confined to the nanometer range, phonon transport within them can be significantly altered due to various effects, namely (i) increased boundary scattering; (ii) changes in phonon dispersion relation; and (iii) quantization of phonon transport. For example, theoretical studies (e.g., Chung et al., 2000) have suggested that, as the diameter of a silicon nanowire (NW) becomes smaller than 20 nm, the phonon dispersion relation, and therefore its density of states, could be modified due to phonon confinement. This in turn impacts the phonon group velocities and scattering rates that can further reduce the thermal conductivity of confined structures.

Author(s):  
Keivan Etessam-Yazdani ◽  
Mehdi Asheghi

Experimental measurement of thermal conductivity is considered the most reliable tool for the study of phonon transport in ultra-thin silicon structures. While there has been a great success in thermal conductivity measurement of ultra-thin silicon layers down to 20 nm over the past decade, it is not clear if the existing techniques and tools can be extended to the measurements of sun 100 Angstrom layers. In this paper, an analytical study of the feasibility of electrical Joule heating and thermometry in patterned metal bridges is presented. It is concluded that thermal conductivity of silicon layers as thin as 5 nm can be obtained (uncertainty 20%) by performing steady-state measurements using an on-substrate nanoheater structure. The thermal characterization of silicon layers as thin as 1 nm may be possible using frequency domain measurements.


1968 ◽  
Author(s):  
G L Ostheller ◽  
R E Schmunk ◽  
R J Kearney

2020 ◽  
Vol 124 (42) ◽  
pp. 23027-23037
Author(s):  
Devin McGlamery ◽  
Alexander A. Baker ◽  
Yi-Sheng Liu ◽  
Martín A. Mosquera ◽  
Nicholas P. Stadie

2011 ◽  
Author(s):  
P. B. Thakor ◽  
Y. A. Sonvane ◽  
P. N. Gajjar ◽  
A. R. Jani ◽  
S. K. Tripathi ◽  
...  

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