Titanium-vanadium oxide films were prepared by the sol-gel method. The effects of vanadium incorporation on the crystallization behavior TiO 2 were investigated by X-ray diffraction analysis. The results showed that anatase and rutile type solid solution Ti 1-x V x O 2 films were obtained for x < 0.15 and x > 0.15 samples, respectively. Anatase and V 2 O 5 were found in x = 0.15 sample. Moreover, it was found that the crystallization of the film increased with increasing amount of vanadium. The electrical properties of Ti 1-x V x O 2 films were studied by measuring their resistance and Hall mobility. It was revealed that the resistivity of Ti 1-x V x O 2 films decreased with increasing x when the solid solution was formed, while the resistivity increased when the crystallization of vanadium oxide precipitated. The Hall constant was negative, indicating that Titanium-vanadium oxide is an n-type semiconductor. The evolution of the resistance and Hall mobility was ascribed to the 3d electrons of vanadium.