Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates

2010 ◽  
Vol 28 (3) ◽  
pp. C3H1-C3H4 ◽  
Author(s):  
W. E. Hoke ◽  
T. D. Kennedy ◽  
J. R. LaRoche ◽  
A. Torabi ◽  
J. P. Bettencourt ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Molecular Beam Epitaxial ◽  
Electron Mobility Transistors ◽  
Molecular Beam Epitaxial Growth ◽  
Composite Substrates

Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility Transistors

1989 ◽  
Vol 160 ◽  
Author(s):  
J.M. Ballingall ◽  
Pin Ho ◽  
G J. Tessmer ◽  
P.A. Martin ◽  
T.H. Yu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Device Fabrication ◽  
High Electron ◽  
Single Quantum Well ◽  
High Electron Mobility ◽  
Molecular Beam Epitaxial ◽  
Electron Mobility Transistors ◽  
Current State ◽  
Molecular Beam Epitaxial Growth

AbstractHigh electron mobility transistors (HEMTs) with single quantum well active layers composed of pseudomorphic IπGaAs grown on GaAs and InP are establishing new standards of performance for microwave and millimeter wave applications. This is due to recent progress in the molecular beam epitaxial growth of strained InGaAs heterostructures coupled with developments in short gate length (sub%0.2 µm) device fabrication technology. This paper reviews this progress and the current state-of-the-art for materials and devices.

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