Molecular beam epitaxial growth and characterization of strain-compensated Al[sub 0.3]In[sub 0.7]P/InP/Al[sub 0.3]In[sub 0.7]P metamorphic–pseudomorphic high electron mobility transistors on GaAs substrates

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Molecular beam epitaxial growth and properties of GaAs pseudomorphic high electron mobility transistors on silicon composite substrates

10.1116/1.3322737 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3H1-C3H4 ◽

Cited By ~ 2

Author(s):

W. E. Hoke ◽

T. D. Kennedy ◽

J. R. LaRoche ◽

A. Torabi ◽

J. P. Bettencourt ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Molecular Beam Epitaxial Growth ◽

Composite Substrates

Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequencies

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80139-4 ◽

1995 ◽

Vol 150 ◽

pp. 1252-1255 ◽

Cited By ~ 8

Author(s):

W. Klein ◽

G. Böhm ◽

H. Heiss ◽

S. Kraus ◽

D. Xu ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Molecular-beam epitaxial growth of high quality, double channel AlGaAs/InGaAs pulse-doped pseudomorphic high electron mobility transistors

10.1116/1.586405 ◽

1992 ◽

Vol 10 (2) ◽

pp. 1026

Author(s):

W. E. Hoke

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

High Electron ◽

High Quality ◽

High Electron Mobility ◽

Molecular Beam Epitaxial Growth ◽

Double Channel

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates

10.1116/1.590707 ◽

1999 ◽

Vol 17 (3) ◽

pp. 1131 ◽

Cited By ~ 84

Author(s):

W. E. Hoke ◽

P. J. Lemonias ◽

J. J. Mosca ◽

P. S. Lyman ◽

A. Torabi ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Device Performance ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications

Journal of Applied Physics ◽

10.1063/1.3544041 ◽

2011 ◽

Vol 109 (3) ◽

pp. 033706 ◽

Cited By ~ 5

Author(s):

R. Loesch ◽

R. Aidam ◽

L. Kirste ◽

A. Leuther

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

High Frequency ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gaas Substrates ◽

Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors

Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained‐layer single quantum wells and superlattices on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.352005 ◽

1992 ◽

Vol 72 (11) ◽

pp. 5233-5239 ◽

Cited By ~ 50

Author(s):

Shizuo Fujita ◽

Yi‐hong Wu ◽

Yoichi Kawakami ◽

Shigeo Fujita

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Quantum ◽

Strained Layer ◽

Gaas Substrates ◽

Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80137-2 ◽

1995 ◽

Vol 150 ◽

pp. 1241-1245

Author(s):

H. Künzel ◽

J. Böttcher ◽

A. Hase ◽

S. Strähle ◽

E. Kohn

Keyword(s):

Epitaxial Growth ◽

High Performance ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

Single Quantum ◽

Single Quantum Well ◽

High Electron Mobility ◽

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures

10.1116/1.591406 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1472 ◽

Cited By ~ 2

Author(s):

L. K. Li ◽

B. Turk ◽

W. I. Wang ◽

S. Syed ◽

D. Simonian ◽

...

Keyword(s):

Epitaxial Growth ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Molecular beam epitaxial growth and optical characterization of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates

Applied Physics Letters ◽

10.1063/1.110422 ◽

1993 ◽

Vol 63 (19) ◽

pp. 2691-2693 ◽

Cited By ~ 5

Author(s):

B. J. García ◽

C. Fontaine ◽

A. Muñoz‐Yagüe

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Optical Characterization ◽

Gaas Substrates ◽