Structural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates

2010 ◽  
Vol 28 (6) ◽  
pp. 1271-1273 ◽  
Author(s):  
Peng Tian ◽  
Lirong Huang ◽  
Yi Yu ◽  
Dexiu Huang
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Structural And Optical Properties ◽  
Gaas Substrates ◽  
Quantum Dot Molecules ◽  
Self Assembled ◽  
Inas Quantum Dot

Optical properties of vertically aligned self-assembled InGaAs quantum dot layers on (311)A/B and (100) GaAs substrates

1998 ◽  
Vol 23 (2) ◽  
pp. 365-368 ◽  
Author(s):  
P.P. González-Borrero ◽  
D.I. Lubyshev ◽  
E. Marega Jr ◽  
E. Petitprez ◽  
P. Basmaji
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Gaas Substrates ◽  
Vertically Aligned ◽  
Self Assembled

Optical Properties of Self-assembled InAs Quantum-dot Superluminescent Diodes

2009 ◽  
Vol 55 (1) ◽  
pp. 24-27 ◽  
Author(s):  
SoonIl Jung ◽  
Ilgu Yun ◽  
JooIn Lee ◽  
IlKi Han
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Superluminescent Diodes ◽  
Self Assembled ◽  
Inas Quantum Dot

Self-assembled lateral InAs quantum dot molecules: Dot ensemble control and polarization-dependent photoluminescence

2006 ◽  
Vol 83 (4-9) ◽  
pp. 1526-1529 ◽  
Author(s):  
S. Suraprapapich ◽  
S. Kanjanachuchai ◽  
S. Thainoi ◽  
S. Panyakeow
Keyword(s):  
Quantum Dot ◽  
Ensemble Control ◽  
Quantum Dot Molecules ◽  
Self Assembled ◽  
Inas Quantum Dot

Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations

2010 ◽  
Vol 97 (17) ◽  
pp. 173107 ◽  
Author(s):  
T. V. Hakkarainen ◽  
J. Tommila ◽  
A. Schramm ◽  
A. Tukiainen ◽  
R. Ahorinta ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Nanoimprint Lithography ◽  
Structural And Optical Properties ◽  
Inas Quantum Dot

Evolution of self-assembled InAs quantum dot molecules by molecular beam epitaxy

2012 ◽  
Vol 9 (7) ◽  
pp. 1534-1536 ◽  
Author(s):  
Ong-arj Tangmettajittakul ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Molecules ◽  
Self Assembled ◽  
Inas Quantum Dot

Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules

2011 ◽  
Vol 28 (6) ◽  
pp. 067304 ◽  
Author(s):  
Peng Tian ◽  
Li-Rong Huang ◽  
Xiu-Hua Yuan ◽  
De-Xiu Huang
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Quantum Dot Molecules ◽  
Cap Layer ◽  
Inas Quantum Dot

Self-Assembled InAs Lateral Quantum Dot Molecules Growth on (001) GaAs by Thin-Capping-and-Regrowth MBE Technique

2007 ◽  
Vol 121-123 ◽  
pp. 395-400
Author(s):  
S. Suraprapapich ◽  
S. Thainoi ◽  
S. Kanjanachuchai ◽  
S. Panyakeow
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Gaas Layer ◽  
Specific Pattern ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Quantum Dot Molecules ◽  
Self Assembled

InAs lateral quantum dot molecules (QDMs) are grown on (001)-GaAs substrates. The self-assembled QDMs are formed in one continuous molecular beam epitaxial (MBE) growth via a thin-capping-and-regrowth technique. Lateral QDMs, each with 10-12 dots arranged in a specific pattern, are determined by the shapes of the underlying nanopropeller quantum dots (QDs). The nanopropeller QDs in turn are obtained by regrowth on nano-holes which have been previously created by capping the first InAs QD layer grown on (001)-GaAs substrate with a thin GaAs layer. The length of the propeller directly influences the number of QDs in a QDM. By varying the conditions for thin-capping, shorter or longer propellers can be achieved, allowing the number of QDs in each QDM to be controlled.

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