Characterization of the virtual source in an electron‐beam evaporation system

1993 ◽  
Vol 11 (5) ◽  
pp. 2851-2853 ◽  
Author(s):  
Mark D. Miller ◽  
Peter J. Biltoft ◽  
Mike Benapfl
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Virtual Source

Characterization of Gd[sub 2]O[sub 3] Films Deposited on Si(100) by Electron-Beam Evaporation

2001 ◽  
Vol 148 (2) ◽  
pp. G29 ◽  
Author(s):  
D. Landheer ◽  
J. A. Gupta ◽  
G. I. Sproule ◽  
J. P. McCaffrey ◽  
M. J. Graham ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation

On the Growth and Physical-chemical Characterization of Tb5Si2Ge2 Thin Films Produced by Electron-beam Evaporation

2015 ◽  
Vol 2 (1) ◽  
pp. 26-32
Author(s):  
A.L. Pires ◽  
J.H. Belo ◽  
I.T. Gomes ◽  
L. Fernandes ◽  
P.B. Tavares ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Chemical Characterization ◽  
Electron Beam Evaporation ◽  
Physical Chemical

Preparation and characterization of Fe2O3 coating on quartz fabric by electron beam evaporation

2016 ◽  
Vol 42 (16) ◽  
pp. 19386-19392 ◽  
Author(s):  
Shouxiang Jiang ◽  
Linghui Peng ◽  
Ronghui Guo ◽  
Dagang Miao ◽  
Songmin Shang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Quartz Fabric

Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

2013 ◽  
Vol 320 ◽  
pp. 150-154
Author(s):  
Hao Ren ◽  
Qun Zeng ◽  
Xi Hui Liang
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Morphologies ◽  
Ingaas Detector

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO 2 Mixture

2009 ◽  
Vol 26 (4) ◽  
pp. 046801 ◽  
Author(s):  
Li Wei-Long ◽  
Jia Rui ◽  
Liu Ming ◽  
Chen Chen ◽  
Xie Chang-Qing ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Si Nanocrystals ◽  
Fabrication And Characterization
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