Comments on: ‘‘Grain boundary diffusion of phosphorus in polycrystalline silicon’’

Author(s):  
Herbert F. Mataré
1980 ◽  
Vol 51 (3) ◽  
pp. 1576-1581 ◽  
Author(s):  
J. C. M. Hwang ◽  
P. S. Ho ◽  
J. E. Lewis ◽  
D. R. Campbell

1986 ◽  
Vol 76 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Robert W. Dutton ◽  
Steven W. Novak

ABSTRACTThe diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon. In preannealed polysilicon, the boron diffusion coefficient is found to be 30% smaller than in polysilicon annealed after implantation. This reflects the effect of the grain size in the diffusion coefficient since preannealed polysilicon has larger grains and smaller density of grain boundaries per unit area.


1982 ◽  
Vol 43 (C1) ◽  
pp. C1-363-C1-368 ◽  
Author(s):  
H. Baumgart ◽  
H. J. Leamy ◽  
G. K. Celler ◽  
L. E. Trimble

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-691-C1-696 ◽  
Author(s):  
K. VIEREGGE ◽  
R. WILLECKE ◽  
Chr. HERZIG

2005 ◽  
Vol 96 (10) ◽  
pp. 1187-1192 ◽  
Author(s):  
Raymond J. Kremer ◽  
Mysore A. Dayananda ◽  
Alexander H. King

Sign in / Sign up

Export Citation Format

Share Document