Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy

Author(s):  
S. Shimomura
2015 ◽  
Vol 13 (0) ◽  
pp. 469-473 ◽  
Author(s):  
P. Patil ◽  
T. Tatebe ◽  
Y. Nabara ◽  
K. Higaki ◽  
N. Nishii ◽  
...  

2009 ◽  
Vol 311 (7) ◽  
pp. 1666-1670 ◽  
Author(s):  
R. Contreras-Guerrero ◽  
A. Guillen-Cervantes ◽  
Z. Rivera-Alvarez ◽  
A. Pulzara-Mora ◽  
S. Gallardo-Hernandez ◽  
...  

1998 ◽  
Vol 37 (Part 1, No. 8) ◽  
pp. 4515-4517 ◽  
Author(s):  
Masanobu Ohashi ◽  
Tatsuya Saeki ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Yasunori Okamoto ◽  
...  

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1786-1788 ◽  
Author(s):  
Tatsuya Saeki ◽  
Takeharu Motokawa ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Akira Adachi ◽  
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Yasuaki Tatsuoka ◽  
Hitoshi Kamimoto ◽  
Yoshiaki Kitano ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
...  

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