Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy
1995 ◽
Vol 13
(2)
◽
pp. 696
◽
2015 ◽
Vol 13
(0)
◽
pp. 469-473
◽
1994 ◽
Vol 12
(2)
◽
pp. 1043
◽
Keyword(s):
2009 ◽
Vol 311
(7)
◽
pp. 1666-1670
◽
1998 ◽
Vol 37
(Part 1, No. 8)
◽
pp. 4515-4517
◽
2000 ◽
Vol 18
(3)
◽
pp. 1572
◽
2018 ◽
Vol 33
(8)
◽
pp. 084002
◽
Keyword(s):
2009 ◽
Vol 311
(7)
◽
pp. 2102-2105
◽
Keyword(s):
Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 3B)
◽
pp. 1786-1788
◽
GaAs/GaAs[sub 0.8]P[sub 0.2] quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy
1999 ◽
Vol 17
(3)
◽
pp. 1155
◽