Comparative analysis of the optical quality of single In0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown by molecular beam epitaxy on (100) and (311) GaAs substrates

1995 ◽  
Vol 67 (13) ◽  
pp. 1885-1887 ◽  
Author(s):  
O. Brandt ◽  
K. Kanamoto ◽  
M. Tsugami ◽  
T. Isu ◽  
N. Tsukada
Keyword(s):  
Comparative Analysis ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Optical Quality ◽  
Gaas Substrates

Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy

2004 ◽  
Vol 270 (1-2) ◽  
pp. 62-68 ◽  
Author(s):  
J. Miguel-Sánchez ◽  
M. Hopkinson ◽  
M. Gutiérrez ◽  
P. Navaretti ◽  
H.Y. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Optical Quality

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

scholarly journals Growth of GaAsBi/GaAs Multi Quantum Wells on (100) GaAs Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 13 (0) ◽  
pp. 469-473 ◽  
Author(s):  
P. Patil ◽  
T. Tatebe ◽  
Y. Nabara ◽  
K. Higaki ◽  
N. Nishii ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gaas Substrates

Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy

1995 ◽  
Vol 379 ◽  
Author(s):  
Ron Kaspi ◽  
Keith R. Evans ◽  
Don C. Reynolds ◽  
Jeff Brown ◽  
Marek Skowronski
Keyword(s):  
Surface Roughness ◽  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Optical Quality ◽  
Growth Surface ◽  
High Energy Electron ◽  
Extended Reflection

ABSTRACTAntimony was used as a surfactant during solid-source molecular beam epitaxy of AIGaAs layers. A steady-state surface-segregated population of Sb was maintained at the AIGaAs growth surface by providing a continuous Sb2 flux to compensate for loss due to thermal desorption. Above ∼ 650 °C, the incorporation rate of Sb was negligible, thereby allowing the deposition of AlGaAs layers despite the presence of Sb at the surface. A significant improvement in the optical quality of Al0.24Ga0 76As layers was observed by photoluminescence. In addition, extended reflection high energy electron diffraction oscillations and a reduction in Al0.24Ga0.76As surface roughness was observed when Sb was employed as a surfactant.

Sign in / Sign up

Export Citation Format

Share Document