Empirical dark current modeling for complementary metal oxide semiconductor active pixel sensor

2002 ◽  
Vol 41 (6) ◽  
pp. 1216 ◽  
Author(s):  
Igor Shcherback
Keyword(s):  
Metal Oxide ◽  
Dark Current ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Active Pixel Sensor ◽  
Active Pixel

Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology

2016 ◽  
Vol 4 (2) ◽  
pp. 130-136
Author(s):  
N.P. Maity ◽  
◽  
Reshmi Maity ◽  
Srimanta Baishya ◽  
◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Low Noise ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Active Pixel Sensor ◽  
Active Pixel

In this paper, our focus is on designing of complementary metal-oxide-semiconductor (CMOS) photodiode based active pixel sensor (APS) and performance analysis and achievements for CMOS image sensor. Different important design parameters like photocurrent, conversion gain, conversion factor, dynamic range, readout speed, and quantum efficiency have been calculated. Noise is also considered for the design at different phase of operations of CMOS APS. Various design parameters of our design are computed and compared with simulated results. Noise calculation shows that the pixel noise is dominated by reset noise.

A Very Low Dark Current Temperature-Resistant, Wide Dynamic Range, Complementary Metal Oxide Semiconductor Image Sensor

2008 ◽  
Vol 47 (7) ◽  
pp. 5390-5395 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Jose Tejada ◽  
Hiromichi Oshikubo ◽  
Nana Akahane ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dark Current ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wide Dynamic Range
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