Characterization study of an intensified complementary metal–oxide–semiconductor active pixel sensor

2011 ◽  
Vol 82 (3) ◽  
pp. 033709 ◽  
Author(s):  
J. A. Griffiths ◽  
D. Chen ◽  
R. Turchetta ◽  
G. J. Royle
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Active Pixel Sensor ◽  
Active Pixel ◽  
Characterization Study

Design of a Low Noise Active Pixel Sensor using Complementary Metal-Oxide-Semiconductor Technology

2016 ◽  
Vol 4 (2) ◽  
pp. 130-136
Author(s):  
N.P. Maity ◽  
◽  
Reshmi Maity ◽  
Srimanta Baishya ◽  
◽  
...  
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Low Noise ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Active Pixel Sensor ◽  
Active Pixel

In this paper, our focus is on designing of complementary metal-oxide-semiconductor (CMOS) photodiode based active pixel sensor (APS) and performance analysis and achievements for CMOS image sensor. Different important design parameters like photocurrent, conversion gain, conversion factor, dynamic range, readout speed, and quantum efficiency have been calculated. Noise is also considered for the design at different phase of operations of CMOS APS. Various design parameters of our design are computed and compared with simulated results. Noise calculation shows that the pixel noise is dominated by reset noise.

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