Temperature dependence of quantum efficiency enhancement using plasmonic gratings on nBn detectors with thin absorbers

2019 ◽  
Vol 13 (04) ◽  
pp. 1
Author(s):  
Jill A. Nolde ◽  
Eric M. Jackson ◽  
Mijin Kim ◽  
Chul Soo Kim ◽  
Chadwick L. Canedy ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Plasmonic Gratings

Resonant quantum efficiency enhancement of midwave infrared nBn photodetectors using one-dimensional plasmonic gratings

2015 ◽  
Vol 106 (26) ◽  
pp. 261109 ◽  
Author(s):  
Jill A. Nolde ◽  
Mijin Kim ◽  
Chul Soo Kim ◽  
Eric M. Jackson ◽  
Chase T. Ellis ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Efficiency Enhancement ◽  
One Dimensional ◽  
Midwave Infrared ◽  
Plasmonic Gratings

Bandgap Engineering as a Potential Tool for Quantum Efficiency Enhancement

2021 ◽  
pp. 545-564
Author(s):  
Reddy Kunda Siri Kiran Janardhana ◽  
Raju Kumar ◽  
Tata Narsinga Rao ◽  
Srinivasan Anandan
Keyword(s):  
Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Bandgap Engineering ◽  
Potential Tool

scholarly journals Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097169 ◽  
Author(s):  
Daisuke Iida ◽  
Ahmed Fadil ◽  
Yuntian Chen ◽  
Yiyu Ou ◽  
Oleksii Kopylov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Ag Nanoparticles ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Quantum Well Structures

scholarly journals Quantum Efficiency Enhancement of Bialkali Photocathodes by an Atomically Thin Layer on Substrates

2019 ◽  
Vol 216 (23) ◽  
pp. 1900501 ◽  
Author(s):  
Hisato Yamaguchi ◽  
Fangze Liu ◽  
Jeffrey DeFazio ◽  
Mengjia Gaowei ◽  
Lei Guo ◽  
...  
Keyword(s):  
Thin Layer ◽  
Quantum Efficiency ◽  
Efficiency Enhancement

scholarly journals External quantum efficiency enhancement by photon recycling with backscatter evasion

2018 ◽  
Vol 57 (13) ◽  
pp. 3372 ◽  
Author(s):  
Koji Nagano ◽  
Antonio Perreca ◽  
Koji Arai ◽  
Rana X Adhikari
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Photon Recycling

Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

1987 ◽  
Vol 97 ◽  
Author(s):  
Gerhard Pensl ◽  
Reinhard Helbig ◽  
Hong Zhang ◽  
Gonther Ziegler ◽  
Peter Lanig
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Efficiency ◽  
Isothermal Annealing ◽  
Furnace Annealing ◽  
Hall Effect Measurements

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

Temperature Dependence of Internal Quantum Efficiency of 20-nm-Wide GaInAsP/InP Compressively-Strained Quantum-Wire Lasers

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 585-588 ◽  
Author(s):  
Takashi Kojima ◽  
Hiroyuki Nakaya ◽  
Suguru Tanaka ◽  
Hideo Yasumoto ◽  
andShigehisa Arai
Keyword(s):  
Temperature Dependence ◽  
Quantum Efficiency ◽  
Quantum Wire ◽  
Internal Quantum Efficiency ◽  
20 Nm
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