Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

1987 ◽  
Vol 97 ◽  
Author(s):  
Gerhard Pensl ◽  
Reinhard Helbig ◽  
Hong Zhang ◽  
Gonther Ziegler ◽  
Peter Lanig
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Efficiency ◽  
Isothermal Annealing ◽  
Furnace Annealing ◽  
Hall Effect Measurements

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

TEMPERATURE DEPENDENCE OF THE HALL EFFECT IN La2−xSrxCuO4 AND ABa2Cu3O7 (A=Y, Gd) HIGH TEMPERATURE SUPERCONDUCTORS

1987 ◽  
Vol 01 (03n04) ◽  
pp. 1067-1070 ◽  
Author(s):  
M. Petravić ◽  
A. Hamzić ◽  
B. Leontić ◽  
L. Forró
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Normal State ◽  
High Temperature Superconductors ◽  
The Other ◽  
Hall Constant ◽  
High Temperature Superconducting ◽  
Superconducting Ceramics ◽  
Hall Effect Measurements

We present Hall effect measurements in the normal state of the high temperature superconducting ceramics La2−xSrxCuO4 (x=0, 0.1, 0.15, 0.2, 0.25, 0.3), YBa2Cu3o7 and GdBa2Cu3O7 . The first family has temperature independent Hall constant for x>0, while in the other two systems RH is proportional to 1/T. From the Hall effect it follows that the transport in these compounds is hole-like.

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Annealing of some II-IV-V2 crystals in the vapor of volatile constituents

2001 ◽  
Vol 692 ◽  
Author(s):  
Valeriy G. Voevodin ◽  
Olga V. Voevodina ◽  
Svetlana A. Bereznaya ◽  
Zoya V. Korotchenko ◽  
Nils C. Fernelius ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Chemical Analysis ◽  
Hall Effect ◽  
Gas Phase ◽  
Initial Imperfection ◽  
Structural Defects ◽  
Volatile Constituents ◽  
Hall Effect Measurements

AbstractExperiments on annealing of CdGeAs2-, CdSnAs2- and ZnGeP2-crystals in the vapor of volatile constituents were carried out. Conductivity and Hall effect measurements were performed to characterize the modification of electrical properties, caused by the interaction of the crystal with the gas phase during annealing. Literature data and the results of the present work are discussed based on the results of a quasi-chemical analysis. This yielded that the results of annealing depends essentially on both the conditions of the experiment and the initial imperfection of the crystal. The most probable native structural defects becoming apparent under the annealing were the following: for CdSnAs2 - SnCd, VAs; for CdGeAs2 - VAs, VCd, CdGe, GeCd; for CdSiAs2 - SiAs, VAs ; for CdSiP2 - VCd, VP; for ZnGeP2 - ZnGe, GeZn, VZn, VP; and for ZnSnP2- ZnSn, SnZn, VZn, VP.

Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
K. Maex ◽  
A. Lauwers ◽  
M. Van Hove ◽  
W. Vandervorst ◽  
M. Van Rossum
Keyword(s):  
Ion Implantation ◽  
Hall Effect ◽  
Phase Formation ◽  
Ion Beam ◽  
High Dose ◽  
Spreading Resistance ◽  
Orientation Effects ◽  
Transport Measurements ◽  
Hall Effect Measurements ◽  
Anneal Temperature

ABSTRACTA study on ion beam synthesis of buried α- and β-FeSi2 in >100< Si is presented. Phase formation has been investigated as a function of implant and anneal temperature. Layer characterization was performed by RBS, XRD, resistivity, spreading resistance and Hall effect measurements. Orientation effects in the layers have been observed depending on the implant temperature. Transport measurements show that die holes are the majority carriers in the semiconducting layers.

Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

2019 ◽  
Vol 98 ◽  
pp. 230-235 ◽  
Author(s):  
I.I. Izhnin ◽  
K.D. Mynbaev ◽  
A.V. Voitsekhovsky ◽  
A.G. Korotaev ◽  
I.I. Syvorotka ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hall Effect ◽  
Spectrum Analysis ◽  
Mobility Spectrum ◽  
Hall Effect Measurements ◽  
Induced Defects

Electrical properties of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5

2001 ◽  
Vol 680 ◽  
Author(s):  
M. Ahoujja ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
J. E. Van Nostrand
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Variable Temperature ◽  
Type Region ◽  
Si Doping ◽  
Gas Source ◽  
Hall Effect Measurements ◽  
Si Doped

ABSTRACTHall-effect measurements were conducted on Si-doped AlxGa1−xN films grown on sapphire substrate by gas source molecular beam epitaxy. The Al mole fraction in the 1 [.proportional]m thick AlxGa1−xN was 0.0, 0.3, and 0.5, and the Si doping concentration was kept at a nominal value of 1018 cm−3. Variable temperature Hall-effect measurements reveal a presence of a highly degenerate n-type region at the AlxGa1−xN /sapphire interface. This degenerate interfacial layer dominates the electrical properties below 30 K and significantly affects the properties of the AlxGa1−xN layer. Thus, by using a two-layer conducting model, the carrier concentration and mobility of the AlxGa1−xN layer alone are obtained.

Diffusion of Atoms Implanted in Poly Silicon Layer on Insulator

1987 ◽  
Vol 106 ◽  
Author(s):  
M. Takai ◽  
M. Izumi ◽  
T. Yamamoto ◽  
A. Kinomura ◽  
K. Gamo ◽  
...  
Keyword(s):  
Hall Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Tail Region ◽  
Furnace Annealing ◽  
Peak Region ◽  
Poly Silicon ◽  
Hall Effect Measurements

ABSTRACTDiffusion of arsenic implanted in poly-silicon on insulator structures after furnace and rapid thermal annealing (RTA) has been investigated by Rutherford backscattering (RBS) and Hall effect measurements. The diffusivity for As in poly–Si on insulator is represented by D = 3.12 × 104 exp (− 3.86/kT) cm/sec for the tail region after both RTA and furnace annealing and D = 34.0 exp (− 3.42/kT) cm2/sec for the peak region after RTA. Poly–Si layers after implantation and annealing were found to have tensile stresses of 3.0 – 4.0 kbar.

Drastic Change in Electrical Properties of Electrodeposited ZnO: Systematic Study by Hall Effect Measurements

2012 ◽  
Vol 116 (30) ◽  
pp. 15925-15931 ◽  
Author(s):  
Tsutomu Shinagawa ◽  
Masaya Chigane ◽  
Kuniaki Murase ◽  
Masanobu Izaki
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Systematic Study ◽  
Drastic Change ◽  
Hall Effect Measurements

scholarly journals Effect of Transition Metal Dopant on the Electrical Properties of ZnO-TiO2 Films Prepared by PLD Technique

2021 ◽  
Vol 19 (49) ◽  
pp. 75-81
Author(s):  
Hussein Jamal Abdul Karim ◽  
Ghuson H. Mohammed
Keyword(s):  
Electrical Properties ◽  
Transition Metal ◽  
Hall Effect ◽  
Transition Metal Oxides ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Mixed Oxides ◽  
Dc Conductivity ◽  
Tio2 Films ◽  
Hall Effect Measurements

In this article, the influence of group nano transition metal oxides such as {(MnO2), (Fe2O3) and (CuO)} thin films on the (ZnO-TiO2) electric characteristics have been analyzed. The prepared films deposited on glass substrate laser Nd-YAG with wavelength (ℷ =1064 nm) ,energy of (800mJ) and number of shots (400). The density of the film was found to be (200 nm) at room temperature (RT) and annealing temperature (573K).Using DC Conductivity and Hall Effect, we obtained the electrical properties of the films. The DC Conductivity shows that that the activation energies decrease while the σRT at annealing temperature with different elements increases the formation of mixed oxides. The Hall effect, the electrical properties of the films were described. It was observed through Hall Effect measurements that the films loaded vectors of the shape N and the type P.

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