Low-pressure metallorganic vapor-phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates

1994 ◽  
Author(s):  
A. Lindner ◽  
Q. Liu ◽  
F. Scheffer ◽  
W. Prost ◽  
Franz-Josef Tegude
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Strained Layer ◽  
Short Period ◽  
Movpe Growth ◽  
Strained Layer Superlattices ◽  
Inp Substrates

GaInAs/GaAs strained‐layer superlattices grown by low pressure metalorganic vapor phase epitaxy

1986 ◽  
Vol 48 (21) ◽  
pp. 1452-1454 ◽  
Author(s):  
A. P. Roth ◽  
M. Sacilotti ◽  
R. A. Masut ◽  
P. J. D’Arcy ◽  
B. Watt ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Strained Layer ◽  
Strained Layer Superlattices

Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1313-1317 ◽  
Author(s):  
Rong -Ting Huang ◽  
Ching -Long Jiang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organometallic Vapor Phase Epitaxy ◽  
Inp Substrates

Growth and characterization of Fe‐doped semi‐insulating InP prepared by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphine

1991 ◽  
Vol 69 (12) ◽  
pp. 8139-8144 ◽  
Author(s):  
Rong‐Ting Huang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Wally Burke ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Low pressure MOVPE growth of ZnSe, ZnTe, and ZnSe/ZnTe strained-layer superlattices

1993 ◽  
Vol 22 (5) ◽  
pp. 537-543 ◽  
Author(s):  
N. Briot ◽  
T. Cloitre ◽  
O. Briot ◽  
B. Gil ◽  
D. Bertho ◽  
...  
Keyword(s):  
Low Pressure ◽  
Strained Layer ◽  
Movpe Growth ◽  
Strained Layer Superlattices

Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers

1992 ◽  
Vol 18 (1-2) ◽  
pp. 57-74 ◽  
Author(s):  
P.J.A Thijs ◽  
J.J.M Binsma ◽  
L.F Tiemeijer ◽  
P.I Kuindersma ◽  
T van Dongen
Keyword(s):  
Quantum Well ◽  
Low Pressure ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Movpe Growth

Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi
Keyword(s):  
Crystal Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Carrier Gases

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.

Electrical Characterization of Ruthenium-Doped InP Grown by Low Pressure Hydride Vapor Phase Epitaxy

2001 ◽  
Vol 4 (6) ◽  
pp. G53 ◽  
Author(s):  
D. Söderström ◽  
S. Lourdudoss ◽  
M. Wallnäs ◽  
A. Dadgar ◽  
O. Stenzel ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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