AlGaAs/GaAs Laser Diodes with GaAs Islands Active Region on a Si Substrate with Higher Characteristic Temperature

1999 ◽  
Vol 38 (Part 1, No. 1A) ◽  
pp. 74-76 ◽  
Author(s):  
Zaman Iqbal Kazi ◽  
Takashi Egawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno
2013 ◽  
Vol 333-335 ◽  
pp. 332-335
Author(s):  
Jin Ling Wu ◽  
Xin Nian Wang ◽  
Lan Dang Yuan

The paper presents an investigation of deformation in the active region of GaAs laser diodes under operating conditions.Since the properties of bulk material and manufactured diode are not identical,a study of the spectral splitting and polarisation changes caused by mechanical stress in the diode is made.These results are used to calibrate instruments for a study of the deformation due to thermal stress in the diode under operating conditions.This thermal stress can exceed the shear stress required for dislocation motion in the active region of the diode.


2015 ◽  
Author(s):  
N. Von Bandel ◽  
J. Bébé Manga Lobé ◽  
M. Garcia ◽  
A. Larrue ◽  
Y. Robert ◽  
...  

1970 ◽  
Vol 1 (2) ◽  
pp. 279-282 ◽  
Author(s):  
H. R. Wittmann ◽  
J. L. Smith
Keyword(s):  

2015 ◽  
Author(s):  
M. Krakowski ◽  
M. Lecomte ◽  
N. Michel ◽  
M. Calligaro ◽  
M. Carbonnelle ◽  
...  
Keyword(s):  

2012 ◽  
Vol 48 (4) ◽  
pp. 465-471 ◽  
Author(s):  
Andrzej Malag ◽  
Elżbieta Dabrowska ◽  
Marian Teodorczyk ◽  
Grzegorz Sobczak ◽  
Anna Kozlowska ◽  
...  

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1552-1555 ◽  
Author(s):  
Takashi Egawa ◽  
Akira Ogawa ◽  
Takashi Jimbo ◽  
Masayoshi Umeno

2019 ◽  
Vol 1410 ◽  
pp. 012104
Author(s):  
S S Rochas ◽  
I I Novikov ◽  
A G Gladyshev ◽  
E S Kolodeznyi ◽  
M V Maximov ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document